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Akademický článek

Detection of Alternaria alternata Associated with Discolored Black Oat Seeds in Korea

Autor: Ji-Min Choi, Ji-Hye Song, Joonseob Ahn, Dea-Wook Kim, Kwang-Yeol Yang

Publikováno v: Research in Plant Disease, Vol 29, Iss 4, Pp 414-419 (2023)

In 2023, a number of seeds suspected to be discolored black oat seeds on oat farms in Gangjin were observed and examined for fungal infection. The species Alternaria alternata was predominant, accounting for 84% of all fungal infections. The appearan

Externí odkaz: https://doaj.org/article/f2bc347366be435dbca5d504ddf2e9d5

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Akademický článek

Design and Analysis of Low Power and High SFDR Direct Digital Frequency Synthesizer

Autor: Ji-Min Choi, Dong-Hyun Yoon, Dong-Kyu Jung, Kiho Seong, Jae-Soub Han, Woojoo Lee, Kwang-Hyun Baek

Publikováno v: IEEE Access, Vol 8, Pp 67581-67590 (2020)

Due to the advantages of fast frequency shifting, continuous phase shifting, fine frequency resolution, large bandwidth, and excellent spectral purity, the direct digital frequency synthesis (DDFS) technique is attracting more attention than ever bef

Externí odkaz: https://doaj.org/article/751925fe67274b7199f750ed46b54fd0

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Akademický článek

LW-DEM: Designing a Low Power Digital-to-Analog Converter Using Lightweight Dynamic Element Matching Technique

Autor: Dong-Hyun Yoon, Dong-Kyu Jung, Bo-Yun Jung, Ji-Min Choi, Yong-Jun Jo, Sukho Lee, Woojoo Lee, Kwang-Hyun Baek

Publikováno v: IEEE Access, Vol 7, Pp 112617-112628 (2019)

The need for low-power wireless sensor networks (WSNs) continues to grow. Based on the fact that digital-to-analog converters (DACs) are essential elements in the WSN and consumes a lot of power, this paper presents a new low-power DAC design to real

Externí odkaz: https://doaj.org/article/9e478a753122476ab789cac50be10daf

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Akademický článek

A SONOS device with a separated charge trapping layer for improvement of charge injection

Autor: Jae-Hyuk Ahn, Dong-Il Moon, Seung-Won Ko, Chang-Hoon Kim, Jee-Yeon Kim, Moon-Seok Kim, Myeong-Lok Seol, Joon-Bae Moon, Ji-Min Choi, Jae-Sub Oh, Sung-Jin Choi, Yang-Kyu Choi

Publikováno v: AIP Advances, Vol 7, Iss 3, Pp 035205-035205-7 (2017)

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained an

Externí odkaz: https://doaj.org/article/e195122f48424ed298ef43c6978339bd

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