Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ji-Min Cho"'
Publikováno v:
IEEE Access, Vol 8, Pp 53901-53914 (2020)
The RealSense camera frequently includes hole regions-unfilled regions where depth information are missing in the depth image. The holes cause serious problems in applications that use depth sensors and often straddle the background and object simult
Externí odkaz:
https://doaj.org/article/b1ee94c13d85430bbc1c3049ef322568
Autor:
Ji-Min Cho, Yeong-Kwan Kim
Publikováno v:
Journal of the Korean Society of Water and Wastewater. 32:527-533
Publikováno v:
Research in Plant Disease, Vol 29, Iss 4, Pp 414-419 (2023)
In 2023, a number of seeds suspected to be discolored black oat seeds on oat farms in Gangjin were observed and examined for fungal infection. The species Alternaria alternata was predominant, accounting for 84% of all fungal infections. The appearan
Externí odkaz:
https://doaj.org/article/f2bc347366be435dbca5d504ddf2e9d5
Autor:
Hye-Kyung Jung, Ji-Min Cho
Publikováno v:
Journal of Curriculum and Evaluation. 16:161-184
Publikováno v:
Journal of Curriculum and Evaluation. 10:173-202
Autor:
Ji-Min Choi, Dong-Hyun Yoon, Dong-Kyu Jung, Kiho Seong, Jae-Soub Han, Woojoo Lee, Kwang-Hyun Baek
Publikováno v:
IEEE Access, Vol 8, Pp 67581-67590 (2020)
Due to the advantages of fast frequency shifting, continuous phase shifting, fine frequency resolution, large bandwidth, and excellent spectral purity, the direct digital frequency synthesis (DDFS) technique is attracting more attention than ever bef
Externí odkaz:
https://doaj.org/article/751925fe67274b7199f750ed46b54fd0
Autor:
Dong-Hyun Yoon, Dong-Kyu Jung, Bo-Yun Jung, Ji-Min Choi, Yong-Jun Jo, Sukho Lee, Woojoo Lee, Kwang-Hyun Baek
Publikováno v:
IEEE Access, Vol 7, Pp 112617-112628 (2019)
The need for low-power wireless sensor networks (WSNs) continues to grow. Based on the fact that digital-to-analog converters (DACs) are essential elements in the WSN and consumes a lot of power, this paper presents a new low-power DAC design to real
Externí odkaz:
https://doaj.org/article/9e478a753122476ab789cac50be10daf
Autor:
Jae-Hyuk Ahn, Dong-Il Moon, Seung-Won Ko, Chang-Hoon Kim, Jee-Yeon Kim, Moon-Seok Kim, Myeong-Lok Seol, Joon-Bae Moon, Ji-Min Choi, Jae-Sub Oh, Sung-Jin Choi, Yang-Kyu Choi
Publikováno v:
AIP Advances, Vol 7, Iss 3, Pp 035205-035205-7 (2017)
A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained an
Externí odkaz:
https://doaj.org/article/e195122f48424ed298ef43c6978339bd