Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Ji-Hoon Yoo"'
Autor:
Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
Micromachines, Vol 14, Iss 2, p 439 (2023)
We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by solving the coupl
Externí odkaz:
https://doaj.org/article/7b6ebff0d2ac43638d46c042c3112e56
Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications
Autor:
Wan-Soo Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, Ji-Hoon Yoo, Hyeon-Seok Jeong, Sethu George, Ji-Min Baek, In-Geun Lee, Tae-Woo Kim, Sang-Kuk Kim, Jacob Yun, Ted Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2081-2089
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92028ed3cc46a75742714c4affe8727
https://doi.org/10.1109/ted.2022.3231576
https://doi.org/10.1109/ted.2022.3231576
Autor:
Hyo-Jin Kim, Ji-Hoon Yoo, Wan-Soo Park, Seung-Won Yun, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Electron Device Letters. 44:229-232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd1615ca7d232edd0c820da12f5e8c2
https://doi.org/10.1109/led.2022.3230966
https://doi.org/10.1109/led.2022.3230966
Autor:
Samuel A Barnes, Daniel G Dillon, Jared W Young, Michael L Thomas, Lauren Faget, Ji Hoon Yoo, Andre Der-Avakian, Thomas S Hnasko, Mark A Geyer, Dhakshin S Ramanathan
Publikováno v:
Cerebral Cortex. 33:5783-5796
The balance between exploration and exploitation is essential for decision-making. The present study investigated the role of ventromedial orbitofrontal cortex (vmOFC) glutamate neurons in mediating value-based decision-making by first using optogene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::868bc207f56ed2f968d0ef8d26c16045
https://doi.org/10.1093/cercor/bhac459
https://doi.org/10.1093/cercor/bhac459
Autor:
So‐Yeol Yoo, Yong‐Hyeon Mun, Nae‐Won Kang, Jang Mo Koo, Dong Hwan Lee, Ji Hoon Yoo, Sang Min Lee, Seokjin Koh, Jong Chan Park, Taejung Kim, Eun Kyung Shin, Han Sol Lee, Jaehoon Sim, Keon Wook Kang, Sang Kyum Kim, Cheong‐Weon Cho, Myeong Gyu Kim, Dae‐Duk Kim, Jae‐Young Lee
Publikováno v:
Bioengineering & Translational Medicine.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ade1d88b91aca57df65ce65057a182c
https://doi.org/10.1002/btm2.10472
https://doi.org/10.1002/btm2.10472
Autor:
Wan-Soo Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, Ji-Hoon Yoo, Ji-Hun Kim, Hyeon-Seok Jeong, Sethu George, Ji-Min Beak, In-Geun Lee, Tae-Woo Kim, Sang-Kuk Kim, Jacob Yun, Ted Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4609f40097026eace29b8393ea010eba
https://doi.org/10.1109/iedm45625.2022.10019567
https://doi.org/10.1109/iedm45625.2022.10019567
Autor:
null So‐Yeol Yoo, null Yong‐Hyeon Mun, null Nae‐Won Kang, null Jang Mo Koo, null Dong Hwan Lee, null Ji Hoon Yoo, null Sang Min Lee, null Seokjin Koh, null Jong Chan Park, null Taejung Kim, null Eun Kyung Shin, null Han Sol Lee, null Jaehoon Sim, null Keon Wook Kang, null Sang Kyum Kim, null Cheong‐Weon Cho, null Myeong Gyu Kim, null Dae‐Duk Kim, null Jae‐Young Lee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae591060d532fff8ae191e471b52bf91
https://doi.org/10.1002/btm2.10472/v2/response1
https://doi.org/10.1002/btm2.10472/v2/response1
Autor:
In-Geun Lee, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, Sang-Kuk Kim, Jae-Gyu Kim, Jacob Yun, Ted Kim, Jung-Hee Lee, Chan-Soo Shin, Jae-Hak Lee, Kwang-Seok Seo, Dae-Hyun Kim
Publikováno v:
Electronics; Volume 11; Issue 17; Pages: 2744
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::644b4ad6231ace0fbd2790ac70b8ae27
Autor:
Seung-Won Yun, Hyeon-Bhin Jo, Ji-Hoon Yoo, Wan-Soo Park, Hyeon-Seok Jeong, Su-Min Choi, Hyo-Jin Kim, Sethu George, Ji-Min Beak, In-Guen Lee, Tae-Woo Kim, Sang-Kuk Kim, Jacob Yun, Ted Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20275f7c515b18fdeaec10efd33351cc
https://doi.org/10.1109/iedm19574.2021.9720667
https://doi.org/10.1109/iedm19574.2021.9720667
Autor:
Seung-Won Yun, Hyeon-Bhin Jo, Hyeon-Seok Jeong, Wan-Soo Park, Ji-Hoon Yoo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim
Publikováno v:
Solid-State Electronics. 198:108484
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc5d1b4ea8e67a9320dfc72bd160232
https://doi.org/10.1016/j.sse.2022.108484
https://doi.org/10.1016/j.sse.2022.108484