Zobrazeno 1 - 10
of 289
pro vyhledávání: '"Ji-Hoon Ahn"'
Autor:
Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Taehee Noh, Seung Won Lee, Ji‐Hoon Ahn, Bo Soo Kang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract The learning accuracy of neuromorphic computing that mimics the biological brain, is affected by the conductance‐modulation characteristics of an artificial synapse. In ferroelectric‐based devices, these characteristics are implemented u
Externí odkaz:
https://doaj.org/article/67807649c2e244e9b32eadf5e994f40d
Autor:
Jisu Byun, Wonwoo Kho, Hyunjoo Hwang, Yoomi Kang, Minjeong Kang, Taewan Noh, Hoseong Kim, Jimin Lee, Hyo-Bae Kim, Ji-Hoon Ahn, Seung-Eon Ahn
Publikováno v:
Nanomaterials, Vol 13, Iss 19, p 2704 (2023)
The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing of unstructured data, encompassing text, speech, and video. Traditional serial computing systems based on the von Neumann architecture, employed
Externí odkaz:
https://doaj.org/article/9b14d83f0ce34e26addc877336762717
Publikováno v:
Nanomaterials, Vol 13, Iss 15, p 2187 (2023)
Hf1−xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low c
Externí odkaz:
https://doaj.org/article/88543e62942a4f62a04e68faac221664
Autor:
Esther Lee, Tae Hyeon Kim, Seung Won Lee, Jee Hoon Kim, Jaeun Kim, Tae Gun Jeong, Ji-Hoon Ahn, Byungjin Cho
Publikováno v:
Nano Convergence, Vol 6, Iss 1, Pp 1-8 (2019)
Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated impr
Externí odkaz:
https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624
Autor:
Hyunjin Jo, Jeong-Hun Choi, Cheol-Min Hyun, Seung-Young Seo, Da Young Kim, Chang-Min Kim, Myoung-Jae Lee, Jung-Dae Kwon, Hyoung-Seok Moon, Se-Hun Kwon, Ji-Hoon Ahn
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to prac
Externí odkaz:
https://doaj.org/article/3afccdaee9cc40728934e63cfb593347
Autor:
Myoung-Jae Lee, Ji-Hoon Ahn, Ji Ho Sung, Hoseok Heo, Seong Gi Jeon, Woo Lee, Jae Yong Song, Ki-Ha Hong, Byeongdae Choi, Sung-Hoon Lee, Moon-Ho Jo
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
The improvement of the thermoelectric figure of merit ZT has been hindered by the challenges associated with the independent control of the electrical and thermal conductivity. Here the authors show that SnS2nanosheets can lead to an increased ZT via
Externí odkaz:
https://doaj.org/article/52f8af50f48843a59a7959799443c57e
Publikováno v:
Acta Neuropathologica Communications, Vol 8, Iss 1, Pp 1-20 (2020)
Abstract Cerebral amyloid angiopathy (CAA), defined as the accumulation of amyloid-beta (Aβ) on the vascular wall, is a major pathology of Alzheimer’s disease (AD) and has been thought to be caused by the failure of Aβ clearance. Although two typ
Externí odkaz:
https://doaj.org/article/b76a2bcdda7541aeb7b4f06cb99e9410
Autor:
Seon Pyo Hong, Myung Jin Yang, Jung Hyun Bae, Du Ri Choi, Young-Chan Kim, Myeon-Sik Yang, Byungkwan Oh, Kyung Won Kang, Sang-Myeong Lee, Bumseok Kim, Yong-Dae Kim, Ji Hoon Ahn, Gou Young Koh
Publikováno v:
Nature Cardiovascular Research. 2:449-466
Understanding the function of the nasal vasculature in homeostasis and pathogenesis of common nasal diseases is important. Here we describe an extensive network of venous sinusoids (VSs) in mouse and human nasal mucosa. The endothelium of the VSs exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2747560acadb02c6141ca6416a7f99e
https://doi.org/10.1038/s44161-023-00257-3
https://doi.org/10.1038/s44161-023-00257-3
Autor:
Jae Chan Park, Chang Ik Choi, Sang-Gil Lee, Seung Jo Yoo, Ji-Hyun Lee, Jae Hyuck Jang, Woo-Hee Kim, Ji-Hoon Ahn, Jeong Hwan Kim, Tae Joo Park
Publikováno v:
Journal of Materials Chemistry C. 11:1298-1303
A HfO2 film was grown using discrete feeding ALD, an advanced ALD process designed to improve the surface coverage of the precursor, which decreased the residual impurities in the film and increased the film density.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eec33e7b0762b19649ddf2b074826ebe
https://doi.org/10.1039/d2tc03485a
https://doi.org/10.1039/d2tc03485a
Publikováno v:
Journal of Materials Chemistry C. 11:3743-3750
Electric-potential-assisted atomic layer deposition was demonstrated for Ru film growth. Surface reaction was modified via the electric potential, which affected the nucleation and microstructure of films. Assorted film properties were improved notab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5591f0a7472d763d91567c8f18d5a07f
https://doi.org/10.1039/d2tc04755a
https://doi.org/10.1039/d2tc04755a