Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ji-Fang He"'
Autor:
Yu Liu, Le-Feng Wang, Xin-Chun Yang, Chang-Lin Lu, Kui-Bao Li, Mu-Lei Chen, Na Li, Hong-Shi Wang, Jiu-Chang Zhong, Li Xu, Zhu-Hua Ni, Wei-Ming Li, Kun Xia, Da-Peng Zhang, Hao Sun, Zong-Sheng Guo, Yong-Hui Chi, Ji-Fang He, Zhi-Yong Zhang, Feng Jiang, Hong-Jiang Wang
Publikováno v:
BMC Cardiovascular Disorders, Vol 21, Iss 1, Pp 1-10 (2021)
Abstract Objectives To investigate the long-term outcome of patients with acute ST-segment elevation myocardial infarction (STEMI) and a chronic total occlusion (CTO) in a non-infarct-related artery (IRA) and the risk factors for mortality. Methods T
Externí odkaz:
https://doaj.org/article/4ea4c434d6e542b79cb0556a3bc94017
Autor:
Ji-Fang He, Yi-Xing Yang, Jiang-Yuan Li, Lu Liang, Li Xu, Yu Liu, Zong-Sheng Guo, Qi Yang, Tao Jiang, Xiang-Min Lin, Xin-Chun Yang, Mu-Lei Chen, Pi-Xiong Su, Jiu-Chang Zhong, Le-Feng Wang
Publikováno v:
Journal of Clinical Medicine, Vol 12, Iss 2, p 433 (2023)
Background: Ischemia reperfusion injury (IRI) remains a major problem in patients with acute ST-segment elevation myocardial infarction (STEMI) undergoing primary percutaneous coronary intervention (PCI). We have developed a novel reperfusion strateg
Externí odkaz:
https://doaj.org/article/c8667f270f204b43bccf9f6fe9527b64
Autor:
Yi-Xing Yang, Xin-Ming Liu, Yuan Fu, Chuang Li, Hong-Jiang Wang, Jiang-Yuan Li, Ji-Fang He, Li Xu, Kun Xia, Zhi-Yong Zhang, Shuai-Feng Wang, Huai-Peng Zhang, Jiu-Chang Zhong, Mu-Lei Chen, Pi-Xiong Su, Le-Feng Wang
Publikováno v:
SSRN Electronic Journal.
Autor:
Mi-Feng Li, Yu-Jia Wei, Ying Yu, Juan Wang, Yu-Ming He, Lijuan Wang, Chao-Yang Lu, Zhichuan Niu, Haiqiao Ni, Guowei Wang, Ji-Fang He, Yu He, Guo-Wei Zha, Xiang-Jun Shang
Publikováno v:
Nano Letters. 13:1399-1404
We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distrib
Autor:
Chenyang Xue, Zhichuan Niu, Ji-Fang He, Jun Tang, Hao Guo, Ni Haiqiao, Yunbo Shi, Wendong Zhang, Ying Yu, Mi-Feng Li, Jun Liu
Publikováno v:
Materials
Materials; Volume 5; Issue 12; Pages: 2917-2926
Materials, Vol 5, Iss 12, Pp 2917-2926 (2012)
Materials; Volume 5; Issue 12; Pages: 2917-2926
Materials, Vol 5, Iss 12, Pp 2917-2926 (2012)
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the field
Publikováno v:
Optoelectronics Letters. 7:325-329
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading
Autor:
Jia-ping, Wei, Kang, Li, Hong, Zhao, Ji-fang, He, Jing, Wen, Chun-yan, Zhou, Xiao-guang, Wu, Jia-rui, Wang, Shen-mao, Li, Zhi-Yong, Zhang, Feng, Ling
Publikováno v:
Zhonghua xin xue guan bing za zhi. 35(10)
To observe the relationship between coronary and carotid/cerebral atherosclerotic stenosis.Carotid/aortocranial angiography and coronary angiography were performed in 34 CAD patients complicated with symptomatic cerebral ischemia. Patients were divid
Autor:
Ying Yu, Guo-Wei Zha, Mi-Feng Li, Zhichuan Niu, Shang Xiangjun, Lijuan Wang, Ji-Fang He, Haiqiao Ni
Publikováno v:
Semiconductor Science and Technology. 27:115010
GaAs p+?n+?junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I?V) characteristics show that the junctions without QDs are weak degenerate due to
Publikováno v:
Chinese Physics B. 21:037802
The solar spectrum covers a broad wavelength range, which requires that antireflection coating (ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell. In this paper, we present two methods to measure t
Autor:
Bin Zhu, Zhichuan Niu, Xiaohong Yang, Qin Han, Xin Wang, Shaoqing Liu, Haiqiao Ni, Ji-Fang He
Publikováno v:
Chinese Physics Letters. 29:038501
Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate. Dark-current densities of 7.2 × 10−7 A/cm2 at 0 V and 3.6 × 10−4 A/cm2 at −5 V, a high quantum effici