Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ji Myoung Lee"'
Autor:
Ji-Myoung Lee1, Seon-Young Park1 drpsy@naver.com, Jung-Ho Choi1, Uh-Jin Kim1, Soo-Jung Rew2, Jae Yeong Cho3, Youngkeun Ahn3, Sung-Wook Lim1, Chung-Hwan Jun1, Chang-Hwan Park1, Hyun-Soo Kim1, Sung-Kyu Choi1, Jong-Sun Rew1
Publikováno v:
Gut & Liver. Jan2016, Vol. 10 Issue 1, p58-62. 5p.
Autor:
Sung-min Kim, Sung-young Lee, Donggun Park, In-Hyuk Choi, Ji-Myoung Lee, Jun-Bo Yoon, Weon Wi Jang, Dong-Won Kim, Min-Sang Kim, Keun Hwi Cho, Eun-Jung Yoon
Publikováno v:
Solid-State Electronics. 52:1578-1583
We developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical “top-down” complementary metal–oxide–semiconductor (CMOS) fabrication technology. NEMS cant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224da5d8b9876a0acf12abc088ca210e
https://doi.org/10.1016/j.sse.2008.06.026
https://doi.org/10.1016/j.sse.2008.06.026
Autor:
Youngkeun Ahn, Ji Myoung Lee, Park Changhwan, Jung Ho Choi, Seon-Young Park, Soo Jung Rew, Jong Sun Rew, Sung Kyu Choi, Hyun Soo Kim, Uh Jin Kim, Chung Hwan Jun, Sung Wook Lim, Jae Yeong Cho
Publikováno v:
Gut and Liver
Background/Aims Percutaneous coronary intervention (PCI) is often performed therapeutically, and antithrombotic treatment is required for at least 12 months after stent implantation. However, the development of post-PCI upper gastrointestinal bleedin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3f9895693f5e603a89731f8adf40eff
https://pubmed.ncbi.nlm.nih.gov/25963075
https://pubmed.ncbi.nlm.nih.gov/25963075
Publikováno v:
Japanese Journal of Applied Physics. 55:04ED17
FinFET devices were fabricated using plasma doping both at the source and drain extensions and in the channel region. In an effort to overcome dopant loss after the strip process, oxide buffer layers were deposited prior to plasma doping. Owing to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136804576d02548d775877dd43fd896e
https://doi.org/10.7567/jjap.55.04ed17
https://doi.org/10.7567/jjap.55.04ed17
Autor:
Ji Myoung, Lee, Kang Moon, Lee, Hyung Wook, Kim, Woo Chul, Chung, Chang Nyol, Paik, Jeong Rok, Lee, Yeong Jin, Choi, Jin Mo, Yang
Publikováno v:
The Korean journal of gastroenterology = Taehan Sohwagi Hakhoe chi. 52(2)
Urological complications are not uncommon in Crohn's disease (CD). The most common manifestations are renal stones, enterovesical fistulas, and ureteral obstruction, but renal parenchymal disease has rarely been reported. IgA nephropathy, the most co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::50c879d3c3ade4c5fb438e307d364c91
https://pubmed.ncbi.nlm.nih.gov/19077504
https://pubmed.ncbi.nlm.nih.gov/19077504
Autor:
Min-Sang Kim, Sung Dae Suk, Keun Hwi Cho, Donggun Park, Kyoung Hwan Yeo, Jun Seo, Bokkyoung Park, Won-Seoung Lee, Dong-Won Kim, Suk-Kang Sung, Hyunjun Bae, Ji-Myoung Lee, Yun-Young Yeoh, Ming Li
Publikováno v:
2008 Symposium on VLSI Technology.
Gate-all-around (GAA) MOSFET with single silicon nanowire is fabricated and applied to SONOS memory as a cell transistor for NAND flash string. Driving current over 1 uA, which is sufficient to NAND string, is obtained with single nanowire of ~7 nm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162768ac866883b4374514f0ded97381
https://doi.org/10.1109/vlsit.2008.4588593
https://doi.org/10.1109/vlsit.2008.4588593
Autor:
null Min-Sang Kim, null Weon Wi Jang, null Ji-Myoung Lee, null Sung-Min Kim, null Eun-Jung Yun, null Keun-Hwi Cho, null Sung-Young Lee, null In-Hyuk Choi, null Yong, null Jun-Bo Yoon, null Dong-Won Kim, null Donggun Park
Publikováno v:
2007 International Semiconductor Device Research Symposium.
As design rule is scaled down in complementary metal-oxide-semiconductor (CMOS) device, the several disadvantages based on electric field effect in CMOS device were emerged such as short channel effect, junction leakage and gate oxide leakage current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebd0e57d54bb0f1b20b81a1ba160724
https://doi.org/10.1109/isdrs.2007.4422470
https://doi.org/10.1109/isdrs.2007.4422470
Autor:
Donggun Park, J.M. Park, Nammyun Cho, Wouns Yang, Yeong-Taek Lee, Sang-Yeon Han, Jintaek Park, Hyun-Mog Park, Satoru Yamada, Won-joo Kim, Se-Hoon Kim, Byung-Il Ryu, Young-pil Kim, H. H. Kim, Chang-Min Jeon, Moon-Sook Lee, Si-Ok Sohn, K.S. Chae, Ji-Myoung Lee
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
The pad-polysilicon side contact (PSC) has drastically improved the performance of the partially-insulated bulk FinFET (Pi-FinFET). PSC enabled to dope a source and drain (S/D) of the fin structure uniformly from the top of the fin to the Pi layer. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6429bda371f854954910d51679f19345
https://doi.org/10.1109/vlsit.2007.4339768
https://doi.org/10.1109/vlsit.2007.4339768
Autor:
Sung-young Lee, In-Hyuk Choi, Dong-Won Kim, Eun Jung Yun, Bork Kyoung Park, Sung Min Kim, Donggun Park, Ji-Myoung Lee, Min Sang Kim
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
We compared electrical characteristics of TBCFET (Triple-Bridge-Channel MOSFET), MBCFET (Multi-Bridge-Channel MOSFET) and SBCFET (Single-Bridge-Channel MOSFET) with sub-20 nm gates. TBCFET is suitable for low-power application with 2.9 mA/um of on-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853c76cb4286e85467c2d9049776de63
https://doi.org/10.1109/icicdt.2007.4299545
https://doi.org/10.1109/icicdt.2007.4299545
Autor:
Ho-Seok Ki, Chung-Hwan Jun, Hyun-Soo Kim, Jong-Sun Rew, Sung Uk Lim, Sung-Kyu Choi, Chang-Hwan Park, Seon-Young Park, Ji Myoung Lee
Publikováno v:
Gastroenterology. 146:S-321
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5b0e8af6ea7685c18ac24a20a7e897
https://doi.org/10.1016/s0016-5085(14)61158-6
https://doi.org/10.1016/s0016-5085(14)61158-6