Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ji Hong Jhe"'
Publikováno v:
Journal of the Korean Vacuum Society. 17:215-219
The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at using a conventional PECVD system. The compositions of Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0eb52860615de2db82136d196b1148e
https://doi.org/10.5757/jkvs.2008.17.3.215
https://doi.org/10.5757/jkvs.2008.17.3.215
Autor:
Jee Soo Chang, Ji-Hong Jhe, Se-Young Seo, Hansuek Lee, J.H. Shin, Jinku Lee, Namkyoo Park, Hak-Seung Han
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 12:783-796
A review is presented of Si nanocluster sensitization of Er-doped silica for planar optical amplifiers using top-pumping 470-nm light-emitting diodes (LEDs). The motivation and basic physical principles underlying the nanocluster sensitization are fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db168b35ef91c78a5e0e6ed79210485a
https://doi.org/10.1109/jstqe.2006.876160
https://doi.org/10.1109/jstqe.2006.876160
Autor:
Jung H. Shin, Moon-Seung Yang, Ji-Hong Jhe, Dae Won Moon, Kyung Joong Kim, Seung-Hui Hong, Suk-Ho Choi
Publikováno v:
Thin Solid Films. 478:21-24
The stoichiometry of SiOx layers in SiOx/SiO2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::147fc211b4633dfd2fca353d611205f4
https://doi.org/10.1016/j.tsf.2004.09.044
https://doi.org/10.1016/j.tsf.2004.09.044
Autor:
Dae Won Moon, JungHoon Shin, Ji-Hong Jhe, Moon-Seung Yang, Kyung Joong Kim, Se-Young Seo, Kwan-Sik Cho
Publikováno v:
Applied Physics Letters. 85:3408-3410
The effect of nitride passivation on the visible photoluminescence from nanocrystal Si (nc-Si) is investigated. Silicon-rich silicon nitride (SRSN) and silicon-rich silicon oxide (SRSO), which consist of nc-Si embedded in silicon nitride and silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5345a38614789a567e4cb93992bedf
https://doi.org/10.1063/1.1787599
https://doi.org/10.1063/1.1787599
Publikováno v:
Applied Physics Letters. 82:4489-4491
The characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69349d9d2d6db10d307b5ac4485096de
https://doi.org/10.1063/1.1586458
https://doi.org/10.1063/1.1586458
Publikováno v:
Applied Physics Letters. 79:287-289
The effect of the Si layer thickness on the Er3+ photoluminescence properties of the Er-doped Si/SiO2 superlattice is investigated. We find that the Er3+ luminescence intensity increases by over an order of magnitude as the Si layer thickness is redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2766b1c3f55862f36e6061b1038e0dc
https://doi.org/10.1063/1.1383802
https://doi.org/10.1063/1.1383802
Publikováno v:
Applied Physics Letters. 76:3567-3569
The Er–carrier interaction and its effects on the Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices are investigated. The interaction between the erbium atoms and the electronic carriers was controlled by doping erbium into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cdaa5e593e96ed629456a5e8ac59524
https://doi.org/10.1063/1.126740
https://doi.org/10.1063/1.126740
Publikováno v:
Quantum Sensing and Nanophotonic Devices.
Nanocrystal Si (nc-Si) sensitization of Er in a silica matrix to obtain high optical activity in a Si-compatible material is investigated. Er-doped silicon-rich silicon oxide (SRSO) films, which consist of nc-Si embedded inside an SiO2 matrix, were d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6306e48d69ed0679543c76577e6b061f
https://doi.org/10.1117/12.529273
https://doi.org/10.1117/12.529273
Publikováno v:
SPIE Proceedings.
The Er3+ luminescent properties of Er-doped Si/SiO2 superlattices are investigated. The superlattices were deposited either by electron cyclotron resonance plasma enhanced chemical vapor deposition or by ultra-high vacuum ion beam sputter deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e408b56607cb6be46b728b04b29ed8
https://doi.org/10.1117/12.424770
https://doi.org/10.1117/12.424770
Publikováno v:
MRS Proceedings. 638
The effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c9c890eb7f1f73aa0bd9e7e5d4667fd
https://doi.org/10.1557/proc-638-f17.3.1
https://doi.org/10.1557/proc-638-f17.3.1