Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ji Hao Cheng"'
Autor:
Ji Hao Cheng, 鄭季豪
93
Using high resolution transmission electron microscopy (HRTEM), we investigated the microstructure of the interface fabricated after twist-bonding(90° & 180°) two N-type and P-type GaAs wafers respectively at a series of annealing temperatu
Using high resolution transmission electron microscopy (HRTEM), we investigated the microstructure of the interface fabricated after twist-bonding(90° & 180°) two N-type and P-type GaAs wafers respectively at a series of annealing temperatu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/72745092137673109756
Autor:
Ji Hao Cheng, Yi Qiang Sun
Publikováno v:
Advanced Materials Research. :1182-1186
This paper analyzed the HSLA pipeline steel’s stress corrosion behavior and mechanism which tested in the saturated solution of H2S. The steel’s SSCC susceptibility was determined by constant load tensile according to NACE TM-0177 standard. Used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870003378b1f400e0455f822e4990fc9
https://doi.org/10.4028/www.scientific.net/amr.573-574.1182
https://doi.org/10.4028/www.scientific.net/amr.573-574.1182
Publikováno v:
Advanced Materials Research. 583:306-309
The high strength low alloy (HSLA) steels have been extensively used in offshore engineering. The appropriate microstructure of the HSLA structural steels was designedly controlled in steel making for offshore construction. The different microstructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd88e1f991fb258a235e0aeae9c182b5
https://doi.org/10.4028/www.scientific.net/amr.583.306
https://doi.org/10.4028/www.scientific.net/amr.583.306
Publikováno v:
ECS Transactions. 16:123-125
Sapphire substrate has been used for high temperature GaN growths. However, the performance of GaN device was limited to the high series resistance and the poor heat dissipation caused by its insulating nature. In order to solve such problems, the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7357d13d428de0a6b5f92f96bcc75b5
https://doi.org/10.1149/1.2983167
https://doi.org/10.1149/1.2983167
Publikováno v:
ECS Transactions. 6:285-287
The KrF pulsed excimer laser (248 nm) and the frequency- tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light- emitting diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef5c71addabec8efcc063b6918a3df73
https://doi.org/10.1149/1.2731196
https://doi.org/10.1149/1.2731196
Publikováno v:
ECS Transactions. 6:41-43
Electrical performance was found to be closely related to the variation of nanosized interface morphology. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a2478b97bdcb741ea788773b6d0518
https://doi.org/10.1149/1.2731169
https://doi.org/10.1149/1.2731169
Publikováno v:
Applied Physics Letters. 85:4831-4833
The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400°C. When tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3e8672f47b0e78c32db37d717becd9
https://doi.org/10.1063/1.1823592
https://doi.org/10.1063/1.1823592
Publikováno v:
Applied Physics Letters. 96:051109
Periodic triangle pyramidal array patterned sapphire substrates (PSSs) with various slanted angles were fabricated by wet etching. It was found beside normal wurtzite GaN, zinc blende GaN was found on the sidewall surfaces of PSS. The crystal quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7659e0e478af79c7bb8167215867c760
https://doi.org/10.1063/1.3304004
https://doi.org/10.1063/1.3304004
Publikováno v:
Journal of The Electrochemical Society. 156:H640
In this study, three types of LEDs were investigated. Samples designated as “CV-LED” were conventional LEDs without any laser treatment. Samples designated as “KrF-LED” were CV-LEDs treated with KrF pulsed excimer laser, while “YAG-LEDs”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62683164fccca239f33b580ce799c67e
https://doi.org/10.1149/1.3148251
https://doi.org/10.1149/1.3148251
First-principles analysis of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers
Publikováno v:
Journal of Applied Physics. 102:013710
First-principles analysis is applied in relating microstructures with properties of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers. Using high-resolution transmission electron microscope results, the detailed atomic arrangeme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab8a5ac45b74ef309f678f52f29314f
https://doi.org/10.1063/1.2748335
https://doi.org/10.1063/1.2748335