Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Ji Chul Yang"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P718-P722
Post cleaning experiments for front end of the line (FEOL) CMP with silica and ceria slurries are carried out on commercial polishers with 300 mm oxide, nitride, and integrated shallow trench isolation (STI) wafers. Considering the charge attraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ef389d73308a9e275f93ea2692c80c
https://doi.org/10.1149/2.0101710jss
https://doi.org/10.1149/2.0101710jss
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102fdeddf2ba2d4f8a64cef2e4f623d4
https://doi.org/10.1109/asmc.2017.7969253
https://doi.org/10.1109/asmc.2017.7969253
Publikováno v:
Journal of Electronic Materials. 42:97-102
Polishing debris generated by pad surface conditioning has been suspected as a major source of microscratches in the chemical–mechanical planarization (CMP) process. In this study, we investigated the pad debris generated by an in situ conditioning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af387af46df4202375d25248967fd8e
https://doi.org/10.1007/s11664-012-2334-9
https://doi.org/10.1007/s11664-012-2334-9
Autor:
Taesung Kim, Hoomi Choi, Jaung-Joo Kim, Ji Chul Yang, Sang Won Lee, M.S. Oh, Soo-Chul Lee, Jinsung Kim
Publikováno v:
Thin Solid Films. 521:201-205
Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. The majority of the defect is caused by synthesized nano-materials in the process chamber. So analysis and removal of these nano-mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defded9bb31d20502e3fdeba9e373e04
https://doi.org/10.1016/j.tsf.2011.11.084
https://doi.org/10.1016/j.tsf.2011.11.084
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P101-P106
In this study, we analyzed the coefficient of friction (COF) of film surface and pad interface during the wafer polishing process to make a correlation with the existence of polyelectrolyte additive in the slurry, which is adsorbed onto the wafer sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634f5800ce691e7a561391e4fc763d6d
https://doi.org/10.1149/2.011203jss
https://doi.org/10.1149/2.011203jss
Publikováno v:
International Journal of Machine Tools and Manufacture. 50:860-868
Wafer removal rates and defects were investigated for 200 mm tetraethyl orthosilicate (TEOS) oxide chemical mechanical planarization (CMP) processes using two types of CMP pads: a porous pad and a solid pad with micro-holes. An initial CMP test condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b28ec706691c52194ae225d1dfc6f12
https://doi.org/10.1016/j.ijmachtools.2010.06.007
https://doi.org/10.1016/j.ijmachtools.2010.06.007
Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish
Publikováno v:
Wear. 268:505-510
The step height reduction mechanism of chemical mechanical planarization (CMP) was studied to increase the removal rate of ceria (CeO2) abrasive, which is based on slurry application to high aspect ratio patterns. Four kinds of nano-abrasives at 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f33f440773608d87cae20394e8dfdc
https://doi.org/10.1016/j.wear.2009.09.008
https://doi.org/10.1016/j.wear.2009.09.008
Publikováno v:
Journal of Electronic Materials. 39:338-346
Temperature control to stabilize the microscale contact surface between the pad and wafer, especially to prevent pad surface degradation, plays an important role in chemical mechanical polishing (CMP) processing of sub- 50-nm devices. In this work, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96d408ad55b23c71ec77b9e37424f40
https://doi.org/10.1007/s11664-009-1064-0
https://doi.org/10.1007/s11664-009-1064-0
Publikováno v:
Wear. 255:808-818
The fundamental tribological characteristics of 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS), octadecyltrichlorosilane (OTS), and single chain alkanethiol self-assembled monolayers (SAMs) with various chain lengths were investigated in order to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632ecf0b7c0f3ecdc8526ee72d4a79bf
https://doi.org/10.1016/s0043-1648(03)00058-9
https://doi.org/10.1016/s0043-1648(03)00058-9
Publikováno v:
ECS Meeting Abstracts. :1274-1274
Poly silicon is the preferred gate material in terms of fabrication process in the fab, and gate height control is one of the factors determining transistor performance. If we can have a better uniformity control of poly CMP, it will be beneficial no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a94e891b7e305be2c7aaba3c411bff90
https://doi.org/10.1149/ma2017-01/26/1274
https://doi.org/10.1149/ma2017-01/26/1274