Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Jiří Pangrác"'
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Autor:
Alice Hospodková, Jakub Čížek, František Hájek, Tomáš Hubáček, Jiří Pangrác, Filip Dominec, Karla Kuldová, Jan Batysta, Maciej O. Liedke, Eric Hirschmann, Maik Butterling, Andreas Wagner
Publikováno v:
Materials, Vol 15, Iss 19, p 6916 (2022)
A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to fin
Externí odkaz:
https://doaj.org/article/86afadf50476437aa37216d69b10989a
Autor:
Alice Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubík, Matěj Hývl, Jiří Pangrác, Filip Dominec, Tereza Košutová
Publikováno v:
ACS Applied Materials & Interfaces. 15:19646-19652
Autor:
František Hájek, Vitezslav Jarý, Tomáš Hubáček, Filip Dominec, Alice Hospodková, Karla Kuldová, Jiří Oswald, Jiří Pangrác, Tomáš Vaněk, Maksym Buryi, Christophe Dujardin, Gilles Ledoux
Publikováno v:
ECS Journal of Solid State Science and Technology.
We report luminescence decay characteristics of the InGaN/GaN scintillator heterostructures doped with Zn. Unusually large shifting of luminescence band caused by Zn acceptors incorporated in InGaN is observed both in time-resolved and excitation-dep
Autor:
Alice Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubík, Jiří J. Mareš, Jiří Pangrác, Filip Dominec, Karla Kuldová, Eduard Hulicius
Publikováno v:
Journal of Crystal Growth. 605:127061
Autor:
Gilles Ledoux, Alice Hospodková, Karla Kuldová, František Hájek, Jiri Oswald, Markéta Zíková, Tomáš Hubáček, Jiří Pangrác, Christophe Dujardin
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
International audience; In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum w
Autor:
Eduard HULICIUS, František HÁJEK, Alice HOSPODKOVÁ, Pavel HUBÍK, Zuzana GEDEONOVÁ, Tomáš HUBÁČEK, Jiří PANGRÁC, Karla KULDOVÁ
Publikováno v:
NANOCON 2021 Conference Proeedings.
Autor:
Alice Hospodková, Jiří Pangrác, Markéta Zíková, Tomáš Hubáček, František Hájek, F. Dominec, Karla Kuldová, Aliaksei Vetushka, Stanislav Hasenöhrl
Publikováno v:
Lithuanian Journal of Physics. 59
In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying
Autor:
Jiří Pangrác, František Hájek, Alice Hospodková, Jiří Oswald, Tomáš Vaněk, F. Dominec, Tomáš Hubáček, Karla Kuldová
Publikováno v:
NANOCON Conference Proeedings.
Autor:
Jiří Pangrác, František Hájek, Alice Hospodková, Jiri Oswald, Karla Kuldová, R. Horešovský, F. Dominec, Tomáš Hubáček
Publikováno v:
Journal of Luminescence. 236:118127
Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is
Autor:
Karla Kuldová, Petr Bábor, Pavel Kejzlar, Tomáš Hubáček, Alice Hospodková, Tereza Košutová, František Hájek, Tomáš Vaněk, Jiří Pangrác, F. Dominec, Artur Lachowski
Publikováno v:
Journal of Crystal Growth. 565:126151
Nitride heterostructures with an extremely high number of InGaN/GaN multiple quantum wells (MQWs) were grown and studied by multiple techniques. Large redshift (282 meV) in photoluminescence (PL) spectra was observed with an increasing number of quan