Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jhy-Jyi Sze"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 4, Pp 59-64 (2014)
The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependen
Externí odkaz:
https://doaj.org/article/491409e7673a4134872156a524483f5e
Autor:
Seiji Takahashi, Yi-Min Huang, Jhy-Jyi Sze, Tung-Ting Wu, Fu-Sheng Guo, Wei-Cheng Hsu, Tung-Hsiung Tseng, King Liao, Chin-Chia Kuo, Tzu-Hsiang Chen, Wei-Chieh Chiang, Chun-Hao Chuang, Keng-Yu Chou, Chi-Hsien Chung, Kuo-Yu Chou, Chien-Hsien Tseng, Chuan-Joung Wang, Dun-Nien Yaung
Publikováno v:
Sensors, Vol 17, Iss 12, p 2816 (2017)
A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated
Externí odkaz:
https://doaj.org/article/e943c9552b8649ad8783b651839b2c7f
Autor:
Chi-Hsien Chung, Chiang Wei-Chieh, Kuo-Yu Chou, Tzu-Hsiang Chen, Tseng Chien-Hsien, Tung-Ting Wu, Takahashi Seiji, Chin-Chia Kuo, Chuan-Joung Wang, Huang Yimin, Dun-Nien Yaung, Chuang Chun-Hao, King Liao, Tung-Hsiung Tseng, Fu-Sheng Guo, Jhy-Jyi Sze, Hsu Wei-Cheng, Chou Keng-Yu
Publikováno v:
Sensors, Vol 17, Iss 12, p 2816 (2017)
Sensors; Volume 17; Issue 12; Pages: 2816
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 12; Pages: 2816
Sensors (Basel, Switzerland)
A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac67032e3f5a8aeb975f5a08156255f4
https://www.mdpi.com/1424-8220/17/12/2816
https://www.mdpi.com/1424-8220/17/12/2816
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 4, Pp 59-64 (2014)
The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25fb0f3aa93c2153cf682515fa941b25
https://doi.org/10.1109/jeds.2014.2318060
https://doi.org/10.1109/jeds.2014.2318060
Autor:
W.P. Mo, S. Takahashi, R.J. Lin, Kuo-Ching Huang, Gene. Hung, C.C. Chuang, Jhy-Jyi Sze, S.Y. Chen, F.J. Shiu, R.L. Lee, Jeng-Shyan Lin, Chung Wang, S. G. Wuu, W.I. Hsu, Chia-Shiung Tsai, Yeur-Luen Tu, D.N. Yaung, H.Y. Cheng, S.J. Tsai, T.H. Hsu, W.H. Wu, Y.P. Chao, S.T. Tsai, Wen-De Wang, Jen-Cheng Liu, Ta-Wei Wang, Chi-Chuan Wang
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
This paper demonstrates an advanced 1.1um pixel backside illuminated CMOS image sensor with a 3D stacked architecture. The carrier wafer in conventional BSI is replaced by ASIC wafer, which contains a part of periphery circuit and is connected to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5143c8683d3a586b5263ebe5180e7cd
https://doi.org/10.1109/vlsit.2014.6894429
https://doi.org/10.1109/vlsit.2014.6894429