Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jhong-Ren Huang"'
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 67, Iss No 3, Pp 955-961 (2022)
In this work, nanosized Ni (nNi) powders of 50 nm are mixed with Cr and Ni submicron-powders (600 nm) to fabricate Cr-50 mass% Ni alloys by vacuum hot pressing. In order to evaluate the influence of the nanosized Ni powders, different amounts of na
Externí odkaz:
https://doaj.org/article/6d69d2a2ce2942b988c1188ba342a962
Autor:
Jhong-Ren Huang, 黃中人
102
Cr-Cu alloy has been widely used in electrical contact materials due to its good arcing-resistance, extraordinary electric properties and heat conductivity. Recently, it has even been applied to the sputtering target of CuCrO2 thin film, whi
Cr-Cu alloy has been widely used in electrical contact materials due to its good arcing-resistance, extraordinary electric properties and heat conductivity. Recently, it has even been applied to the sputtering target of CuCrO2 thin film, whi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8bpb6f
Autor:
Jhong-Ren Huang, 黃中人
94
The time of information is coming. Due to the limitations of the volume of the products, it is impossible to gather all the functions into one peculiar product. Accessory products therefore have been made for consumers’ needs. Accessory pro
The time of information is coming. Due to the limitations of the volume of the products, it is impossible to gather all the functions into one peculiar product. Accessory products therefore have been made for consumers’ needs. Accessory pro
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13261306079881244293
Fabrication of Al–Cu–Fe particles containing quasicrystalline i-phase by oxidation of ω-phase in air
Publikováno v:
Journal of Materials Science. 55:12448-12457
Alumina-layer-coated spherical particles composed of ω-phase (Al70Cu20Fe10) and icosahedral quasicrystal phase (i-phase, Al64Cu24Fe12) in the Al–Cu–Fe system were fabricated by heating spherical particles of the ω-phase at 700 °C for 200–400
A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes
Publikováno v:
Materials Letters. 310:131506