Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jhnanesh Somayaji"'
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71eb29e0298dc2bf8ea1ea2008f6b05
https://doi.org/10.1109/icee56203.2022.10118172
https://doi.org/10.1109/icee56203.2022.10118172
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063c84b8814fdf52eafb90068bfd1c3e
https://doi.org/10.1109/icee56203.2022.10117871
https://doi.org/10.1109/icee56203.2022.10117871
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77878a0eeb5070d977a91f424e4a0607
https://doi.org/10.1109/icee56203.2022.10118203
https://doi.org/10.1109/icee56203.2022.10118203
Publikováno v:
IEEE Transactions on Electron Devices. 67:4728-4735
This article explores the scope of drain-extended FinFET (DeFinFET) as a high-voltage (HV) device contender for Fin-based SoC applications. For the first time, guidelines for efficient and reliable HV integration in sub-14 nm FinFET nodes are given.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6bb1baa048e81da016c0b46aa54a617
https://doi.org/10.1109/ted.2020.3020904
https://doi.org/10.1109/ted.2020.3020904
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8494dec13046f852372edc8bfc1b4e7c
https://doi.org/10.1109/icee50728.2020.9776875
https://doi.org/10.1109/icee50728.2020.9776875
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this paper, we present the impact of Superjunction (SJ) implant on the performance challenges encountered by LDMOS in the ONstate while developing insights into Space Charge Modulation (SCM) and Quasi-Saturation (QS) behavior in these devices. SJ-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d3975ea5900764b63e368b9423fac3e
https://doi.org/10.1109/vlsi-tsa48913.2020.9203659
https://doi.org/10.1109/vlsi-tsa48913.2020.9203659
Autor:
B. Jhnanesh Somayaji, M. S. Bhat
Publikováno v:
Journal of Low Power Electronics. 13:669-677
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2416b52853107e7de2be42107b311aa7
https://doi.org/10.1166/jolpe.2017.1513
https://doi.org/10.1166/jolpe.2017.1513
Publikováno v:
IEEE Transactions on Electron Devices. 64:4175-4183
Conventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind. In this paper, for the first time, performance and reliability codesign approach usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed3b95deb1dd40bdbadbb8e9df44b96
https://doi.org/10.1109/ted.2017.2733043
https://doi.org/10.1109/ted.2017.2733043
Autor:
M. S. Bhat, B. Jhnanesh Somayaji
Publikováno v:
ISED
This paper presents the design of RESURF based non-conventional LDMOS and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fbdd75deab4958ea6067d0961e5219
https://doi.org/10.1109/ised.2016.7977057
https://doi.org/10.1109/ised.2016.7977057
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.