Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jheng-Yi Jiang"'
Publikováno v:
Energies, Vol 13, Iss 5, p 1122 (2020)
In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split
Externí odkaz:
https://doaj.org/article/1d7a9d3f761e4f26a4c8d57ac9fc2401
Autor:
Jheng-Yi Jiang, 蔣政邑
103
In the past, investors with limited information to make investment decisions, but with Internet facilities and information made easily, the original investment decision is no longer available. So investors must use a lot of information to ma
In the past, investors with limited information to make investment decisions, but with Internet facilities and information made easily, the original investment decision is no longer available. So investors must use a lot of information to ma
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/42299577596034469800
Publikováno v:
IEEE Transactions on Electron Devices. 70:2175-2178
Autor:
Kung-Yen Lee, Wei-Chen Chen, Bing-Yue Tsui, Jia-Wei Hu, Jheng-Yi Jiang, Tian-Li Wu, Chih-Fang Huang
Publikováno v:
IEEE Transactions on Electron Devices. 68:5009-5013
This work demonstrates a trench isolated lateral double-implanted MOSFET (LDMOS) on Si-face in 4H-silicon carbide (SiC). A device $\vphantom {_{\int _{}}}$ where ${L}_{\textit {ch}} = 0.8\,\,\mu \text{m}$ and ${L}_{d} = 12\,\,\mu \text{m}$ shows an $
Publikováno v:
IEEE Electron Device Letters. 42:78-81
In this work, we demonstrate CMOS integration that is fully compatible with a commercial double-implanted MOS (DMOS) process in 4H-SiC without requiring additional masks and cost. The characteristics of the NMOS, the PMOS, the CMOS inverter, and the
Publikováno v:
Microelectronics Reliability. 142:114927
Autor:
Shun-Wei Tang, Jia-Wei Hu, Tian-Li Wu, Z.-H. Huang, Jheng-Yi Jiang, Kung-Yen Lee, P.-W. Huang, Chih-Fang Huang
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper reports on the performance improvement in 1.2KV 4H-SiC VDMOSFETs using a Si-implanted surface technique. Firstly, the devices with Si implantation on the surface shows a decrease of carbon atom percentage from XPS and EDX analysis, an impr
Autor:
Chih-Fang Huang, Feng Zhao, Jheng-Yi Jiang, Yew Hoong Wong, Kuan Yew Cheong, Oliver Peter Amnuayphol
Publikováno v:
Materials Letters. 245:174-177
In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y2O3/Al2O3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with
Autor:
Chih-Fang Huang, Chien-Chung Hung, Jheng-Yi Jiang, Chwan-Ying Lee, Lurng-Shehng Lee, Der-Sheng Chao, Fu-Jen Hsu, Wen-Bin Yeh, Kuo-Ting Chu
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neit
Autor:
Fu-Jen Hsu, Kuo-Ting Chu, Lumg-Shehng Lee, Jheng-Yi Jiang, Chwan-Ying Lee, Chih-Fang Huang, Chien-Chung Hung
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In order to prevent bipolar degradation and improve the performance of body diode in SiC MOSFET, JBS embedded SiC MOSFET technology is attracting researchers’ attention. In this paper, the discussion focuses on JMOS, where the major feature is reta