Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jheng Ming Huang"'
Autor:
Yu Sheng Lai, Chih-Ming Lin, Jheng Ming Huang, Chun Chi Chen, Fu Hsiang Ko, Ching Shun Ku, Shang Yu Tsai
Publikováno v:
ACS Applied Nano Materials. 4:9430-9439
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1c9f48fdcf9f0c0a514015c48c0bd8
https://doi.org/10.1021/acsanm.1c01915
https://doi.org/10.1021/acsanm.1c01915
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::496fa9a98291eb5d652f66741e47e874
https://doi.org/10.2139/ssrn.4016379
https://doi.org/10.2139/ssrn.4016379
Publikováno v:
Algal Research. 69:102903
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78eb87aa6f14e28764a0ff1eebd7fcd
https://doi.org/10.1016/j.algal.2022.102903
https://doi.org/10.1016/j.algal.2022.102903
Publikováno v:
Journal of Alloys and Compounds. 727:565-571
The effects of growth temperature on the microstructure, transport and optoelectronic properties of a series of Al-doped ZnO (AZO) films with thickness of ∼30 nm deposited on polished silicon-(100) and glass substrates by the atomic layer depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a683b3a3da2c42c88159dd5d8e1ed5ea
https://doi.org/10.1016/j.jallcom.2017.08.207
https://doi.org/10.1016/j.jallcom.2017.08.207
Publikováno v:
Physical Chemistry Chemical Physics. 18:15251-15259
The electrical properties and field-emission characteristics of ZnO nanowires (ZnO-NWs) fabricated using a vapor-liquid-solid method were systematically investigated. In particular, we explored the effects of Al-doped ZnO (AZO) films (thickness 4-100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72223ef7d336e1528e5711c398080b41
https://doi.org/10.1039/c6cp01011c
https://doi.org/10.1039/c6cp01011c
Publikováno v:
Materials Chemistry and Physics. 165:245-252
In situ aluminum-doped ZnO (AZO) films were grown on glass substrates by atomic layer deposition (ALD) with an interrupted flow at temperatures in range 200–280 °C; the optimal temperature, 260 °C, depended on the electrical properties. To assess
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6a7fc84955d33ce0493a657877c01e
https://doi.org/10.1016/j.matchemphys.2015.09.024
https://doi.org/10.1016/j.matchemphys.2015.09.024
Publikováno v:
Surface and Coatings Technology. 231:323-327
article i nfo A novel process in an atomic layer deposition system with "flow-rate interruption" (FRI) was developed to obtain epitaxial ZnO films of high quality. The m-plane ZnO thin films were grown on m-plane sapphire sub- strates by atomic layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8300cbd0adfa1a9813855320b928b4
https://doi.org/10.1016/j.surfcoat.2012.05.067
https://doi.org/10.1016/j.surfcoat.2012.05.067
Publikováno v:
Materials Chemistry and Physics. 120:236-239
Thin crystalline films of zinc oxide (ZnO) of high quality have been grown epitaxially on a ( 0001 )c-plane of a sapphire substrate with atomic layer deposition (ALD) at extra-low temperature. With diethylzinc (DEZn) and deionized water as precursors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed9e33140b94ecf41f4d8ae87933a2f
https://doi.org/10.1016/j.matchemphys.2009.12.028
https://doi.org/10.1016/j.matchemphys.2009.12.028
Publikováno v:
Crystal Growth & Design. 10:1460-1463
Nonpolar ZnO films were grown epitaxially on (1010) sapphire substrates at 200 °C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43adfd2560f3e7da2358f18b65fee4d1
https://doi.org/10.1021/cg9013043
https://doi.org/10.1021/cg9013043