Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jhe-Wei Jhu"'
Autor:
William Cheng-Yu Ma, Yan-Jia Huang, Po-Jen Chen, Jhe-Wei Jhu, Yan-Shiuan Chang, Ting-Hsuan Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 724-730 (2020)
In this work, the high-performance junctionless-mode (JL) and low-power inversion-mode (IM) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with nanosheet channels (less than 10-nm in thickness) are vertically integrated in monolithic
Externí odkaz:
https://doaj.org/article/a3ef26a10aaf4b6ba9d19bccdaafe40b
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
Publikováno v:
IEEE Transactions on Plasma Science. 49:15-20
In this work, the impacts of oxygen (O2) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O2 plasma treatmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e7202ea8922c6cbe2138a88d736e82
https://doi.org/10.1109/tps.2020.3015729
https://doi.org/10.1109/tps.2020.3015729
Autor:
Shen-Ming Luo, Cai-Jia Tsai, Ming-Jhe Li, Ting-Hsuan Chang, Jiun-Hung Lin, Yan-Shiuan Chang, William Cheng-Yu Ma, Po-Jen Chen, Jhe-Wei Jhu
Publikováno v:
IEEE Transactions on Plasma Science. 49:26-32
The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A −0.785-V threshold voltage ( $V_{\mathrm {TH}}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03bd537feb3add10017e48933782362
https://doi.org/10.1109/tps.2020.3010483
https://doi.org/10.1109/tps.2020.3010483
Autor:
Jhe-Wei Jhu, Po-Jen Chen, Yan-Shiuan Chang, William Cheng-Yu Ma, Ting-Hsuan Chang, Yan-Jia Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 724-730 (2020)
In this work, the high-performance junctionless-mode (JL) and low-power inversion-mode (IM) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with nanosheet channels (less than 10-nm in thickness) are vertically integrated in monolithic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b5f27319187e5c6cd668ba71152235d
https://ieeexplore.ieee.org/document/9141258/
https://ieeexplore.ieee.org/document/9141258/
Autor:
Jhe-Wei Jhuang, 莊哲維
95
Two new soluble organic semiconductor material systems were investigated. The first system is based on pentacene (Pen), five new organic semiconductor materials: 6,13-Bis(phenylethynyl)pentacene (BPE-Pen)、6,13-Bis(4-pentanoylphenylethynyl)p
Two new soluble organic semiconductor material systems were investigated. The first system is based on pentacene (Pen), five new organic semiconductor materials: 6,13-Bis(phenylethynyl)pentacene (BPE-Pen)、6,13-Bis(4-pentanoylphenylethynyl)p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/16958991103074543065
