Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jhe-Wei Chang"'
Autor:
You-Liang Chen, Darwin Kurniawan, Meng-Dian Tsai, Jhe-Wei Chang, Yu-Na Chang, Shang-Cheng Yang, Wei-Hung Chiang, Chung-Wei Kung
Publikováno v:
Communications Chemistry, Vol 7, Iss 1, Pp 1-7 (2024)
Abstract Immobilization of graphene quantum dots (GQDs) on a solid support is crucial to prevent GQDs from aggregation in the form of solid powder and facilitate the separation and recycling of GQDs after use. Herein, spatially dispersed GQDs are pos
Externí odkaz:
https://doaj.org/article/3dcc27a489f64382b62c300d67ce4cc0
Autor:
Jhe-Wei Chang, 張哲維
100
Aluminum oxide thin films were prepared by reactive direct-current sputtering under different substrate bias (substrate bias=Floating, -50 V, -100 V, -150 V, -200 V) and at low temperature of 200 °C using a tricathode sputtering system. The
Aluminum oxide thin films were prepared by reactive direct-current sputtering under different substrate bias (substrate bias=Floating, -50 V, -100 V, -150 V, -200 V) and at low temperature of 200 °C using a tricathode sputtering system. The
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/f5pm85
Autor:
Jhe-wei Chang, 張哲維
99
Resistance Random Access Memory (RRAM) has attracted increasing attention in recent years as the next-generation nonvolatile memory, due to its non-volatile property like Flash memory, fast access speed like SRAM, high-density storage like DR
Resistance Random Access Memory (RRAM) has attracted increasing attention in recent years as the next-generation nonvolatile memory, due to its non-volatile property like Flash memory, fast access speed like SRAM, high-density storage like DR
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/47281377662858794949
Autor:
Jhe-Wei Chang, Wei-Tsung Chuang, Ying-Jen Shiu, Chun-Jen Su, Michitoshi Hayashi, Hu-Cin Jeng, U-Ser Jeng, Chiao-Cheng Huang, Chung-Yuan Mou, Shiaw-Woei Chen, An-Chung Su, Ying-Huang Lai, Yao-Chang Lee
Publikováno v:
Advanced Functional Materials. 24:2544-2552
A novel one-trough synthesis via an air-water interface is demonstrated to provide hexagonally packed arrays of densely spaced metallic nanoparticles (NPs). In the synthesis, a mesostructured polyoxometalate (POM)-silicatropic template (PSS) is first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb20f8a03904a5b5b80a56bd163664e
https://doi.org/10.1002/adfm.201303724
https://doi.org/10.1002/adfm.201303724
Autor:
Tuo-Hung Hou, Wen-Hsiung Chang, Jhe-Wei Chang, Jiann Shieh, Kuan-Liang Lin, Jun-Hung Lin, Wen-Yueh Jang, Chen-Hsi Lin, Cheng-Tung Chou, Yao Jen Lee
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427c1a008553b4723483f249ca83d878
https://doi.org/10.1109/isdrs.2011.6135404
https://doi.org/10.1109/isdrs.2011.6135404
Autor:
Wen Hsiung Chang, Jun Hung Lin, Jhe Wei Chang, Wen Yueh Jang, Cheng Tung Chou, Tuo-Hung Hou, Tan Fu Lei, Chen Hsi Lin, Kuan Liang Lin, Jiann Shieh, Yao Jen Lee
Publikováno v:
Japanese Journal of Applied Physics. 52:031801
Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO2 and ZrO2 are distinct from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc2dac3aa170b8bd341ab2b5dbd7692
https://doi.org/10.7567/jjap.52.031801
https://doi.org/10.7567/jjap.52.031801