Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jevgenij Starikov"'
Autor:
Annick Penarier, Pavel Shiktorov, Philippe Nouvel, V. Gruzinskis, Luca Varani, Jevgenij Starikov
Publikováno v:
22nd ICNF International Conference on Noise and Fluctuations
22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6579000⟩
22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6579000⟩
The possibility to develop a novel technique that might provide a direct measurement of the impedance field using an electromagnetic near-field equipment is investigated. Preliminary experiments have been performed on silicon substrate using a coaxia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abd31fc350cf5e3dcbadc2437a4c2843
https://doi.org/10.1109/icnf.2013.6579000
https://doi.org/10.1109/icnf.2013.6579000
Autor:
Pavel Shiktorov, Abderrahmane Belghachi, Hugues Marinchio, Christophe Palermo, V. Gruzhinskis, Jevgenij Starikov, Luca Varani, A. Mahi
Publikováno v:
22nd ICNF International Conference on Noise and Fluctuations
22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578929⟩
22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578929⟩
High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23cac3095d91224fd337286bad65e5a8
https://hal.archives-ouvertes.fr/hal-01927799
https://hal.archives-ouvertes.fr/hal-01927799
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
One of the most used methods to investigate electronic-noise in semiconductor two-terminal structures at high frequencies (f ≥ 0.5 GHz) is the measurement of the noise temperature, Tn(f). It consists in the determination of the “black-body” equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c74b7745251089cd985276c53cd60b
https://doi.org/10.1007/978-1-4613-0401-2_110
https://doi.org/10.1007/978-1-4613-0401-2_110
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
Solid-state devices with S-type negative differential conductance (NDC) have a wide application in microelectronics as fast switchers and microwave power generators. Recently, significant attention has been devoted to the heterostructure hot-electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a7e76d894b022843c14573c825ac3e
https://doi.org/10.1007/978-1-4613-0401-2_88
https://doi.org/10.1007/978-1-4613-0401-2_88