Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jevgenij Pavlov"'
Publikováno v:
Materials, Vol 16, Iss 9, p 3424 (2023)
Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumul
Externí odkaz:
https://doaj.org/article/e81a6c45ce6342d7850f141abf4c5c87
Publikováno v:
Materials, Vol 15, Iss 5, p 1861 (2022)
Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC)
Externí odkaz:
https://doaj.org/article/26c707cd9ead4e6ca9d30d6f1f9b47b0
Autor:
Tomas Ceponis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Eugenijus Gaubas
Publikováno v:
Materials, Vol 13, Iss 24, p 5684 (2020)
In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si1−xGex)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-D
Externí odkaz:
https://doaj.org/article/6a73fcfbd69f4a9fb8341b5a00735426
Autor:
Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
Publikováno v:
Sensors, Vol 20, Iss 23, p 6884 (2020)
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectros
Externí odkaz:
https://doaj.org/article/7760ca8e1c5a42babdb8f2b1aaa62cc4
Publikováno v:
Sensors, Vol 15, Iss 3, Pp 5429-5473 (2015)
The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package S
Externí odkaz:
https://doaj.org/article/44b4ec10055f45c6a5b52737dae711eb
Publikováno v:
Medžiagotyra, Vol 20, Iss 3, Pp 252-255 (2014)
The efficiency of solar cells considerably depends on the technological defects introduced by the formation of junctions, passivation layers and electrodes. Identification of these defects present in the high conductivity base layer of modern solar c
Externí odkaz:
https://doaj.org/article/8993d0a0d43e41a3b73f2f8cb99ed23a
Autor:
Tomas Ceponis, Kazimieras Badokas, Laimonas Deveikis, Jevgenij Pavlov, Vytautas Rumbauskas, Vitalij Kovalevskij, Sandra Stanionyte, Gintautas Tamulaitis, Eugenijus Gaubas
Publikováno v:
Sensors, Vol 19, Iss 15, p 3388 (2019)
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices
Externí odkaz:
https://doaj.org/article/2b514584a337493db58324fc5201830c
Autor:
Eugenijus Gaubas, Tomas Ceponis, Edmundas Kuokstis, Dovile Meskauskaite, Jevgenij Pavlov, Ignas Reklaitis
Publikováno v:
Materials, Vol 9, Iss 4, p 293 (2016)
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devic
Externí odkaz:
https://doaj.org/article/c02fdab2d1c748cda0f575659bb205fe
Publikováno v:
Lithuanian Journal of Physics. 53:215-218