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Publikováno v:
Thin Solid Films. 520:5007-5010
This paper presents the characterization of degradation of tunnel oxide during plasma recess of field oxide films for Shallow Trench Isolation (STI) in sub 30 nm flash memory devices. Simple plasma charge damage monitor wafers with Metal-Oxide-Semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b800291d54eff16056d57e3c8e520371
https://doi.org/10.1016/j.tsf.2012.03.005
https://doi.org/10.1016/j.tsf.2012.03.005
