Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jesus Del Alamo"'
Autor:
Yanjie Shao, Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 43:846-849
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2216280cc441610e93459c7fd2d663a
https://doi.org/10.1109/led.2022.3166846
https://doi.org/10.1109/led.2022.3166846
Publikováno v:
IEEE Transactions on Electron Devices. 69:2188-2195
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef3e3179949acf031214c2a84d2441eb
https://doi.org/10.1109/ted.2022.3145767
https://doi.org/10.1109/ted.2022.3145767
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 44:196-196
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b17c928a268da85f3ade45e1897460
https://doi.org/10.1109/led.2022.3232007
https://doi.org/10.1109/led.2022.3232007
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 43:1170-1170
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9586d51760b14cc73b012171e1537a18
https://doi.org/10.1109/led.2022.3189556
https://doi.org/10.1109/led.2022.3189556
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 43:1168-1168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec7e8c93b91534ae84e3445a25ffc1c
https://doi.org/10.1109/led.2022.3186206
https://doi.org/10.1109/led.2022.3186206
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 42:1690-1690
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683e83d0f778286479f4897f08a726cd
https://doi.org/10.1109/led.2021.3124405
https://doi.org/10.1109/led.2021.3124405
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 42:1692-1692
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22241972b635328cf68694d593644d1a
https://doi.org/10.1109/led.2021.3125534
https://doi.org/10.1109/led.2021.3125534
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract Dynamic doping by electrochemical ion intercalation is a promising mechanism for modulating electronic conductivity, allowing for energy‐efficient, brain‐inspired computing hardware. While proton‐based devices have achieved success in
Externí odkaz:
https://doaj.org/article/5bc35a8a571e4906b9a1c83359918270
Autor:
Jesus Del Alamo
Publikováno v:
IEEE Electron Device Letters. 41:1615-1615
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787b1a443745b165cce50b89e4ce23a6
https://doi.org/10.1109/led.2020.3027109
https://doi.org/10.1109/led.2020.3027109
Autor:
Jesus Del Alamo
Publikováno v:
Prof. del Alamo via Chris Sherratt
Integrated circuits based on InGaAs Field Effect Transistors are currently in wide use in the RF front-ends of smart phones and other mobile platforms, wireless LANs, high data rate fiber-optic links and many defense and space communication systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05c74dfa438beb4d8ac84717e6be10b2
http://hdl.handle.net/1721.1/93881
http://hdl.handle.net/1721.1/93881
