Zobrazeno 1 - 10
of 199
pro vyhledávání: '"Jesus A. del Alamo"'
Publikováno v:
IEEE Access, Vol 7, Pp 93537-93544 (2019)
The aim of this paper is to compare the performance of planar toroidal inductors and circular spiral inductors in multilayered technologies, in terms of achievable inductance density. New multi-winding toroidal inductor geometry is proposed to cover
Externí odkaz:
https://doaj.org/article/8c823f13667d4f73bec284911588d94a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 205-214 (2016)
After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over Si offer the potential for device scaling to nanome
Externí odkaz:
https://doaj.org/article/2a924c451b9b4b3095ab36225804f955
Publikováno v:
IEEE Transactions on Electron Devices. 69:4016-4021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27b835c3161d05e56dce4069871d430
https://doi.org/10.1109/ted.2022.3175444
https://doi.org/10.1109/ted.2022.3175444
Publikováno v:
IEEE Transactions on Electron Devices. 69:3334-3340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79783b62c9390695729fc4d461097c94
https://doi.org/10.1109/ted.2022.3165735
https://doi.org/10.1109/ted.2022.3165735
Publikováno v:
IEEE Transactions on Electron Devices. 69:395-399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae7ed187beed8be3e21d9798e23941c9
https://doi.org/10.1109/ted.2021.3131290
https://doi.org/10.1109/ted.2021.3131290
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a86bd63c5d8c38e2432efaa8f939b6
https://doi.org/10.1109/ispsd49238.2022.9813670
https://doi.org/10.1109/ispsd49238.2022.9813670
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e1de37a4fa07669d017e885813d481
https://doi.org/10.1109/irps48227.2022.9764442
https://doi.org/10.1109/irps48227.2022.9764442
Publikováno v:
IEEE Transactions on Electron Devices. 67:3516-3521
A major challenge facing diamond electronics is creating reliable and stable ohmic contacts to a hydrogen-terminated diamond (D:H) conducting surface. In this work, we explore a novel contact-first approach for creating refractory, scalable, and self
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6df1271d71af4ec0a4bd1d92038eff
https://doi.org/10.1109/ted.2020.3009174
https://doi.org/10.1109/ted.2020.3009174
Publikováno v:
IEEE Transactions on Electron Devices. 67:3075-3081
In the presence of prominent gate oxide trapping, the conventional technique for channel mobility extraction in MOSFETs based on ${I}$ – ${V}/{C}$ – ${V}$ measurements becomes inadequate. This is the consequence of two different effects associate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76911c02a5ba9a94593b8d2a2cb23e6
https://doi.org/10.1109/ted.2020.3003844
https://doi.org/10.1109/ted.2020.3003844
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188ca9407a34834f4ec7651f77ff88a7
https://doi.org/10.1109/essderc53440.2021.9631768
https://doi.org/10.1109/essderc53440.2021.9631768