Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jesuk Lee"'
Autor:
Jesuk Lee, Yi-tae Kim, Young-Chan Kim, Myeonggyun Kye, Hoyong Lee, Jaeil An, Myunghan Bae, Bumsik Chung, Sungyoung Seo, Daeyun Kim, Myoungoh Ki, Sooho Son, S.L. Cho, Yeomyung Kim, Min-Sun Keel, Jung-Chak Ahn, Youngsun Oh, Seung Chul Shin, Yong Hun Kwon, Young-Gu Jin
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:3209-3219
A 1.2-Mpixel indirect time-of-flight (ToF) CMOS image sensor is presented to lower peak current and to cancel out multi-user interference. The proposed 4-tap 3.5- $\mu \text{m}$ demodulation pixel is optimally designed to improve quantum efficiency (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c657c9b6a2983eecc51780c8be0f95
https://doi.org/10.1109/jssc.2021.3112405
https://doi.org/10.1109/jssc.2021.3112405
Publikováno v:
IEEE Solid-State Circuits Letters. 4:178-181
This letter presents a low-power continuous-time delta–sigma modulator (CTDSM) that operates at a 0.6-V supply. The loop filter of the CTDSM is realized with inverter-based integrators and negative-R compensation on each integrator’s virtual grou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5142a36c951f5e0715cfa0acde0134ef
https://doi.org/10.1109/lssc.2021.3119641
https://doi.org/10.1109/lssc.2021.3119641
Autor:
Jaehoon Jun, Haneol Seo, Hyukbin Kwon, Jongyeon Lee, Beomsoo Yoon, Youngwoo Lee, Yongbin Kim, Woong Joo, Jesuk Lee, Kyoungmin Koh
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dba45b5c5ae3843b271c482f3872da1
https://doi.org/10.1109/iscas48785.2022.9937226
https://doi.org/10.1109/iscas48785.2022.9937226
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff10f46f63bb28edfcb319d852241f99
https://doi.org/10.1109/ectc51906.2022.00157
https://doi.org/10.1109/ectc51906.2022.00157
Autor:
Lim In-Chun, Jihon Kim, Ju-Hwa Kim, Jeongwook Lim, Long Yan, Seoungjae Yoo, Seung-Hoon Lee, Hye-Lim Park, Jeong-Hoon Park, Jang-beom Yang, Park Jeong-Ho, Rae-Young Kim, Byung-Hoon Ko, Kim Jongboo, Haedo Jeong, Bongjin Sohn, Jeil Ryu, Hee-Jae Jo, Kyung-Ho Lee, Chang Soon Park, Yun-Cheol Han, Jesuk Lee, Dae-Geun Jang, Whee Jin Kim, Wang-Hyun Kim, Sung-jin Jung, Yongin Park, Taeyoul Jang
Publikováno v:
ISSCC
Incorporating different wavelength (400 to 1000nm) LEDs, photoplethysmography (PPG) sensors allow wearable devices to monitor various health parameters such as heart rate (HR), oxygen saturation (SpO 2 ), and blood pressure (BP). Nowadays, PPG sensin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bd903d671a3c27d4cc129c497ae2019
https://doi.org/10.1109/isscc42613.2021.9366035
https://doi.org/10.1109/isscc42613.2021.9366035
Autor:
Honghyun Jeon, Jesuk Lee, Youngsun Oh, Kwi-sung Yoo, Kyung-min Koh, Junho Seok, Donghyuk Park, M. Kim, Chang-Rok Moon, Jaejin Jung, Choi Hana, Won-Chul Choi, Jung-Chak Ahn, Yi-tae Kim, Yujung Choi
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A 0.8μm-pitch 108 megapixels (Mp) ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications. The Nonacell was developed through a 3x3 color filter and 1x3 shared pixel structures which can be operated the 3 binning mode to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da947f08e9ec5ac96581a8374081156e
https://doi.org/10.1109/iedm13553.2020.9371936
https://doi.org/10.1109/iedm13553.2020.9371936
Autor:
Chae Heesung, Kyung-min Kim, Jesuk Lee, Suk-Ki Yoon, Kyungtae Kim, Kyoung-Min Koh, Kim Yunhong, Yongin Park
Publikováno v:
ISCAS
This paper presents an implementation of a CMOS image sensor with a 65 nm CMOS process. The pixel array consists of 13 Mp with 1.12 μm pixel pitch. The fabricated sensor uses 10-bit column-parallel single slope analog-to-digital converters (ADC) bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae36ecbe3fb6befc169196acacb5a266
https://doi.org/10.1109/iscas45731.2020.9180434
https://doi.org/10.1109/iscas45731.2020.9180434
Autor:
Su-Ho Lee, Seonghye Park, Han-Soo Lee, Il-Jin Seo, Hyeok-jong Lee, Seung-Hyun Lim, Yong-Suk Choi, Jesuk Lee, Yongin Park, Kyunghoon Kim, Won-Woong Kim, Il-Seon Ha, Minho Kwon, Kyongmin Koh, Moo-young Kim
Publikováno v:
ISCAS
This paper presents a low-power stacked CMOS image sensor (CIS) in 65/14nm process. With 14nm process, we could achieve 29% less power consumption than the conventional CIS in 65/28nm process. The measured random telegraph noise (RTN) result shows th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a54e551a9ae946711f8b17e9753b36
https://doi.org/10.1109/iscas45731.2020.9180435
https://doi.org/10.1109/iscas45731.2020.9180435
Autor:
Yongin Park, H.S. Jeong, Woong Joo, Dongyoung Jang, Jesuk Lee, Haewon Lee, Seungjoo Nah, Donghyuk Park, Seung-Wook Lee, Yun-Ki Lee, Mi Hye Kim, Yi-tae Kim, Sang-il Jung, Sungho Suh, Chang-Rok Moon, Bum-Suk Kim, Seungwon Cha, Hee-sang Kwon, Jinhwa Han
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A 0.8 μm-pitch 64 megapixels ultrahighresolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4897b99caead3b6b00c7cf6861e5f5b2
https://doi.org/10.1109/iedm19573.2019.8993487
https://doi.org/10.1109/iedm19573.2019.8993487
Autor:
Byung-Jun Park, Duck-Hyung Lee, Sunghoon Oh, Suk-Ki Yoon, Yun-Ki Lee, Donghyuk Park, Jesuk Lee, Duckhyun Chang, Chang-Rok Moon, Youngsun Oh, Won-Chul Choi, Seokyong Hong, Euiyeol Kim, Yong-Woon Kim, Bum-Suk Kim, Yi-tae Kim, Heegeun Jeoung, Sang-il Jung, Yongin Park, Taesub Jung
Publikováno v:
ISSCC
CMOS image sensors (CIS) have attracted much attention for the emerging mobile market, and the demand of high-resolution image sensors in mobile applications continues to increase [1-3]. For this reason, pixel pitch has been reduced down to 1.0μσι
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa42fa7707290887df287fd5e62b00b
https://doi.org/10.1109/isscc.2018.8310195
https://doi.org/10.1109/isscc.2018.8310195