Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jessica Bolinsson"'
Autor:
Jessica Bolinsson, Reza R. Zamani, Alexander M. Whiticar, Jonas Johansson, Kimberly A. Dick, Jesper Nygård, Erik K. Mårtensson, Maria de la Mata
Publikováno v:
Crystal Growth & Design. 18:6702-6712
The integration of III–V semiconductors with Si in device fabrication is facilitated by the use of nanoscale structures such as nanowires. Nanowires are predominantly grown using Au seed particles; however, the seed material is known to affect the
Autor:
Nina Buch-Månson, Laura Bojarskaite, Karen L. Martinez, Esther Alarcon-Llado, Anna Fontcuberta i Morral, Peter Krogstrup, Rune S. Frederiksen, Jesper Nygård, Jessica Bolinsson
Publikováno v:
ACS Photonics. 3:1208-1216
Fluorescence microscopy has tackled many of the burning questions in cellular biology. Probing low-affinity cellular interactions remains one of the major challenges in the field to better understand cellular signaling. We introduce a novel approach
Autor:
Alexander M. Whiticar, Niklas Sköld, Kimberly A. Dick, Jessica Bolinsson, Caroline Lindberg, Jesper Nygård
Publikováno v:
Nano Letters
Lindberg, A H C, Whiticar, A, Dick, K A, Skold, N, Nygård, J & Bolinsson, J 2016, ' Silver as Seed-Particle Material for GaAs Nanowires-Dictating Crystal Phase and Growth Direction by Substrate Orientation ', Nano Letters, vol. 16, no. 4, pp. 2181-2188 . https://doi.org/10.1021/acs.nanolett.5b04218
Lindberg, A H C, Whiticar, A, Dick, K A, Skold, N, Nygård, J & Bolinsson, J 2016, ' Silver as Seed-Particle Material for GaAs Nanowires-Dictating Crystal Phase and Growth Direction by Substrate Orientation ', Nano Letters, vol. 16, no. 4, pp. 2181-2188 . https://doi.org/10.1021/acs.nanolett.5b04218
Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be use
Autor:
Jessica Bolinsson, Sebastian Lehmann, Thomas Sand Jespersen, Jesper Nygård, Rawa Tanta, Kimberly A. Dick, Tom Vosch, Miguel R. Carro-Temboury, Caroline Lindberg
Publikováno v:
Physical Review B. 96
We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electr
Autor:
Nina Buch-Månson, Karen L. Martinez, Jesper Nygård, Trine Berthing, Jessica Bolinsson, Sara Bonde
Publikováno v:
Advanced Functional Materials. 25:3246-3255
Vertical arrays of nanostructures (NSs) are emerging as promising platforms for probing and manipulating live mammalian cells. The broad range of applications requires different types of interfaces, but cell settling on NS arrays is not yet fully con
Autor:
Mats-Erik Pistol, Lars Samuelson, Daniel Jacobsson, Johanna Trägårdh, Kilian Mergenthaler, Anders Gustafsson, Jessica Bolinsson, Martin Ek
Publikováno v:
Nano Research. 7:473-490
In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) i
Publikováno v:
Nano Letters. 12:3200-3206
Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally
Autor:
Nina Buch-Månson, Nicolas Bovet, Morten Meldal, Karen L. Martinez, Surendra Vutti, Jessica Bolinsson, Jesper Nygård, Sanne Schoffelen
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 22(2)
Semiconductor nanowires (NWs) are gaining significant importance in various biological applications, such as biosensing and drug delivery. Efficient and controlled immobilization of biomolecules on the NW surface is crucial for many of these applicat
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:829-846
III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Ra
Publikováno v:
Journal of Crystal Growth. 315:138-142
We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material using cathodoluminescence imaging. This was done by combining III-V semiconductor materials with different bandgaps in single nanowires. We show that it