Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jesse Theiss"'
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVII.
Publikováno v:
IRPS
Electron beam-induced current (EBIC) data, acquired in a scanning transmission electron microscope (STEM), are presented in the context of microelectronic device reliability. The mechanisms causing, and applications of, three distinct EBIC modes are
Publikováno v:
Nano Research. 7:1344-1354
We fabricate arrays of metallic nanoparticle dimers with nanometer separation using electron beam lithography and angle evaporation. These “nanogap” dimers are fabricated on thin silicon nitride membranes to enable high resolution transmission el
Autor:
Talin Ayvazian, Scott D. Sitzman, Jesse Theiss, Zachary Lingley, Brendan Foran, William A. Hubbard, Miles Brodie
Publikováno v:
Applied Physics Letters. 115:133502
We report electronic transport mapping in a single dielectric layer of a polycrystalline BaTiO3 multilayer ceramic capacitor (MLCC) by electron beam induced current (EBIC) measurements using a scanning transmission electron microscope. Ga+ focused io
Autor:
Jesse Theiss, Adam Bushmaker, Michael Huang, Steven C. Moss, Brendan Foran, Nathan Presser, Miles Brodie, Zachary Lingley, Yongkun Sin
Publikováno v:
SPIE Proceedings.
Remarkable progress made in vertical cavity surface emitting lasers (VCSELs) emitting at 850 and 980 nm has led them to find an increasing number of applications in high speed data communications as well as in potential space satellite systems. Howev
Autor:
Chia-Chi Chang, Stephen B. Cronin, Chongwu Zhou, Michelle L. Povinelli, Ting-Wei Yeh, Chun-Yung Chi, Adam Bushmaker, Ningfeng Huang, Maoqing Yao, Stephen LaLumondiere, Jesse Theiss, P. Daniel Dapkus, Chun-Chung Chen
Publikováno v:
Nano Letters. 12:4484-4489
We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping,
Publikováno v:
Nano Letters. 10:2749-2754
We demonstrate a method for fabricating arrays of plasmonic nanoparticles with separations on the order of 1 nm using an angle evaporation technique. Samples fabricated on thin SiN membranes are imaged with high-resolution transmission electron micro
Publikováno v:
Carbon. 47:1292-1296
We demonstrate selective burnout of individual carbon nanotubes that are electronically resonant with the incident laser energy. Raman spectroscopy and atomic force microscopy are used to quantify the burnout of nanotubes. The threshold laser power f
Publikováno v:
2015 IEEE Aerospace Conference.
High voltage Schottky diodes, often used in DC-to-DC converters are susceptible to single event burnout (SEB) due to energetic particle strike, posing a concern for their use in space components. Prior to recent test reports, diode SEB had not been c
Publikováno v:
Optics express. 20(13)
Thin Au films (~5 nm) are known to form island-like structures with small gaps between the islands, which produce intense electric field "hot spots" under visible illumination. In this work, we perform finite difference time domain (FDTD) simulations