Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Jesse Huso"'
Publikováno v:
AIP Advances, Vol 11, Iss 10, Pp 105006-105006-6 (2021)
The semi-insulating single crystal β-Ga2O3 is becoming increasingly useful as a substrate for device fabrication. Fe doping is a method for producing such substrates. Along with Fe dopants, β-Ga2O3:Fe also contains Cr3+. Photoluminescence (PL) emis
Externí odkaz:
https://doaj.org/article/bc3a40e5da05462fbf209807f3939e0c
Autor:
Jeffrey Lapp, Dinesh Thapa, Jesse Huso, Amrah Canul, M. Grant Norton, Matthew D. McCluskey, Leah Bergman
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085217-085217-8 (2020)
To realize the many potential applications of ZnO films, it is vital to produce films with high optical quality that exhibit strong UV luminescence. By combining annealing at an optimal temperature followed by the deposition of a coating, one can ach
Externí odkaz:
https://doaj.org/article/7321752b8bb94d7889109c4b589dc3bf
Autor:
Tej Prakash, Joseph Williams, David McIlroy, Leah Bergman, Jesse Huso, Pavel Bakharev, Timothy Cantrell, Giancarlo Corti, Dewayne Sowell, Alexander Larin, Jessica Hall, Alexander Barzilov, Vladimir Dobrokhotov, Landon Oakes, Alex Kengne
Publikováno v:
Sensors, Vol 12, Iss 5, Pp 5608-5622 (2012)
Chemiresistors (conductometric sensor) were fabricated on the basis of novel nanomaterials—silica nanosprings ALD coated with ZnO. The effects of high temperature and UV illumination on the electronic and gas sensing properties of chemiresistors ar
Externí odkaz:
https://doaj.org/article/e7063685030149e1a807ec5d94082a7a
Publikováno v:
Scientific Reports. 10
Monoclinic gallium oxide (β-Ga2O3) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7a7a114d38f86ff49270605d09b847
https://doi.org/10.1038/s41598-020-76967-6
https://doi.org/10.1038/s41598-020-76967-6
Publikováno v:
Physical Review B. 101
In semiconductor physics, the Urbach rule describes an exponential dependence of the UV-Vis absorption coefficient on photon energy at the band edge. The rule is so ubiquitously applied that a single common mechanism, variability in the local potenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ef2610697c92a9686ea93a9516ea72
https://doi.org/10.1103/physrevb.101.195308
https://doi.org/10.1103/physrevb.101.195308
Publikováno v:
Optical Sensors and Sensing Congress.
Photoluminescence spectroscopy is an important technique for characterizing optical properties of semiconductors. Using a confocal laser microscope system, 2D PL maps of technologically important materials were obtained with excellent signal-to-noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe13a47307295ccbe6ab42cf65bef2b6
https://doi.org/10.1364/ais.2020.atu4i.2
https://doi.org/10.1364/ais.2020.atu4i.2
Autor:
Jesse Huso, Matthew D. McCluskey, Parker Toews, Jani Jesenovec, John S. McCloy, Benjamin Dutton, Cassandra Remple
Publikováno v:
Journal of Crystal Growth. 578:126419
β-Ga2O3 has demonstrated insulating properties with Mg, Fe, and Zn acceptor doping. Here we investigate Cu doping (0.25 at.%) in bulk Czochralski (CZ) and vertical gradient freeze (VGF) β-Ga2O3, with significant Cu incorporation, even with the expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c508777ab694388ce39d731327e4dd89
https://doi.org/10.1016/j.jcrysgro.2021.126419
https://doi.org/10.1016/j.jcrysgro.2021.126419
Autor:
Jeffrey Lapp, Jesse Huso, Matthew D. McCluskey, John L. Morrison, Negar Rajabi, Leah Bergman, Dinesh Thapa
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:16782-16790
MgxZn1−xO thin films were grown as metastable alloys via a sputtering technique in order to achieve single-phase wurtzite alloys with deep-UV optical bandgaps. As-grown alloys with Mg composition range 0–72% resulted in optical bandgaps spanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bffac2b4eee882d3c6b201ac3c3b395
https://doi.org/10.1007/s10854-018-9772-y
https://doi.org/10.1007/s10854-018-9772-y
Publikováno v:
AIP Advances, Vol 11, Iss 10, Pp 105006-105006-6 (2021)
The semi-insulating single crystal β-Ga2O3 is becoming increasingly useful as a substrate for device fabrication. Fe doping is a method for producing such substrates. Along with Fe dopants, β-Ga2O3:Fe also contains Cr3+. Photoluminescence (PL) emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292d515cc97931e853eac894f9a01b29
https://doaj.org/article/bc3a40e5da05462fbf209807f3939e0c
https://doaj.org/article/bc3a40e5da05462fbf209807f3939e0c
Autor:
Jesse Huso, John L. Morrison, Dinesh Thapa, Caleb Corolewski, Matthew D. McCluskey, Leah Bergman
Publikováno v:
Optical Materials. 58:382-389
ZnO is an efficient luminescent material in the UV-range ∼3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d084eeb10b7705a576636d89efbde6f
https://doi.org/10.1016/j.optmat.2016.05.008
https://doi.org/10.1016/j.optmat.2016.05.008