Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Jesse B. Tucker"'
Autor:
Jesse B. Tucker, Ljubisa Dragoljub Stevanovic, Jeff Nasadoski, John Stanley Glaser, Steve Arthur, Michael Joseph Schutten, Kevin Matocha
Publikováno v:
Materials Science Forum. :819-822
SiC MOSFETs are characterized with a specific on-resistance of 8 m⋅cm2 at room temperature and a blocking voltage of 1500 V. Due to the negative shift in the threshold voltage, devices typically show a reduction in on-resistance with temperature. H
Autor:
Viniyak Tilak, Jesse B. Tucker, Stephen Daley Arthur, Ramakrishna Rao, Rich Beaupre, Kevin Matocha, S. Balaji
Publikováno v:
ECS Transactions. 3:367-372
In the process of developing high voltage (1500V) SiC power DIMOSFETs, both channel mobility and gate reliability were investigated. Using a MOS-gated Hall structure, the sheet carrier concentration and electron mobility were measured versus gate bia
Publikováno v:
Materials Science Forum. :983-986
4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm
Autor:
R.L. Klinger, Evan Downey, Kevin Matocha, J. L. Garrett, Jesse B. Tucker, James W. Kretchmer, Steve Arthur, Jeffery B. Fedison, H.C. Peters, Chris S. Cowen, Larry Burton Rowland
Publikováno v:
Materials Science Forum. :1265-1268
Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a la
Autor:
Peter Micah Sandvik, Jesse B. Tucker, J.A. DeLuca, Oliver Ambacher, Vinayak Tilak, Thomas Stauden, Kevin Matocha, Muhammad Ali
Publikováno v:
Materials Science Forum. :1457-1460
Depletion-mode 4H-SiC FETs were fabricated for use as harsh environment gas sensors. To enable sensitivity to NOx, O2 and H2 gases, metal oxide catalysts such as InOx were integrated into the gate of the device. The FETs had a total area of approxima
Publikováno v:
Materials Science Forum. :589-592
Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interf
Autor:
C A Kendziora, R Fischer, Jacob Grun, Syed B. Qadri, M. Yousuf, Mulpuri V. Rao, Mark C Ridgway, B Nachumi, Jesse B. Tucker, S Siddiqui
Publikováno v:
Applied Physics A. 79:1971-1977
We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate structural modifications inside and outside the focal region of Si-implanted GaAs samples that have been irradiated at high power by a focused short-pulse laser. Si
Autor:
Mark E. Twigg, Mohammad Fatemi, Steve Arthur, Robert E. Stahlbush, Shao Ping Wang, Jeffery B. Fedison, Jesse B. Tucker
Publikováno v:
Materials Science Forum. :537-542
Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both light and heavy electrical bias. Our observations suggest that the widely expanded SFs seen after heavy bias are f
Autor:
Ed Kaminsky, J. L. Garrett, B.J. Edward, Richard Alfred Beaupre, J. Cook, Larry B. Rowland, A.F. Allen, J. Foppes, Ho-Young Cha, Jesse B. Tucker, James W. Kretchmer, A. Vertiatchikh, Goutam Koley, A. P. Zhang
Publikováno v:
Journal of Electronic Materials. 32:437-443
The performances of silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs) fabricated on conventional V-doped semi-insulating substrates and new V-free semi-insulating substrates have been compared. The V-free 4H-SiC substrates
Autor:
B.J. Edward, A.F. Allen, Richard Alfred Beaupre, J. L. Garrett, Jesse B. Tucker, A.P. Zhang, James W. Kretchmer, Larry B. Rowland, E.B. Kaminsky, J. Foppes
Publikováno v:
Solid-State Electronics. 47:821-826
We have fabricated SiC metal semiconductor field effect transistors (MESFETs) with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET device