Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jesper Engvall"'
Publikováno v:
Journal of Applied Physics. 80:4012-4018
Optical and electrical properties of SiGe strain‐adjusted superlattices have been studied. Diode structures were processed into waveguide geometries to investigate the role of optical confinement and the lowering of cubic symmetry with regards to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeffbdeeed791ed753cec63a8bfcbd3b
https://doi.org/10.1063/1.363360
https://doi.org/10.1063/1.363360
Publikováno v:
Applied Surface Science. 102:283-287
Optical anisotropies were studied in two types of Si/Ge systems: strain-adjusted superlattices, and thin Ge quantum wells on Si. For the superlattices, investigations of the polarization dependence showed that the topmost valence band is of heavy-hol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab7520323e8e47941ee1a91751337ec
https://doi.org/10.1016/0169-4332(96)00065-7
https://doi.org/10.1016/0169-4332(96)00065-7
Autor:
Hermann G. Grimmeiss, J. F. Nützel, Gerhard Abstreiter, M. Gail, J. Olajos, Jesper Engvall, J. Brunner
Publikováno v:
Semiconductor Science and Technology. 10:319-325
We report on detailed studies of the bandgap of Si/SixGe1-x quantum well structures grown on (001) Si by molecular beam epitaxy. Photocurrent and photoluminescence spectroscopy are used to determine the bandgap of the SiGe alloy up to x=0.67. We foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c45a1829d2c4868c759917d1ae6e1d80
https://doi.org/10.1088/0268-1242/10/3/014
https://doi.org/10.1088/0268-1242/10/3/014
Autor:
U. Menczigar, Hermann G. Grimmeiss, Erich Kasper, Hartmut Presting, H. Kibbel, Gerhard Abstreiter, J. Olajos, M. Gail, Jesper Engvall
Publikováno v:
Semiconductor Science and Technology. 9:2011-2016
Interband optical transitions have been studied in a variety of short-period Si/Ge superlattice structures by means of photocurrent spectroscopy, infrared absorption, photo- and electroluminescence. Furthermore, the bandgap photoluminescence from str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4f31152ba0a75137565cf721093c45
https://doi.org/10.1088/0268-1242/9/11s/026
https://doi.org/10.1088/0268-1242/9/11s/026
Autor:
Hermann G. Grimmeiss, Erich Kasper, Hartmut Presting, Ying-Bo Jia, Horst Kibbel, J. Olajos, Jesper Engvall
Publikováno v:
Physical Review B. 49:2615-2621
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f152c38f558d9801c75a00264978b3f1
https://doi.org/10.1103/physrevb.49.2615
https://doi.org/10.1103/physrevb.49.2615
Autor:
Hartmut Presting, Erich Kasper, Hermann G. Grimmeiss, V. Nagesh, J. Olajos, Jesper Engvall, H. Kibbel
Publikováno v:
Thin Solid Films. 222:237-242
Using recent studies of absorption and photoluminescence, different junction space charge techniques have been employed to separate intrinsic signals from extrinsic responses in ultrathin Si/Ge superlattices. The diodes showed good I–V characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec61ff99958bd810dc8d8a462e7571c
https://doi.org/10.1016/0040-6090(92)90076-n
https://doi.org/10.1016/0040-6090(92)90076-n
Autor:
Gerhard Abstreiter, J. Olajos, Hermann G. Grimmeiss, U. Menczigar, Horst Kibbel, Erich Kasper, Hartmut Presting, Jesper Engvall
Publikováno v:
Physical Review B. 46:12857-12860
We report an identification and determination of the band-gap energies in a series of strain-symmetrized ${\mathrm{Si}}_{\mathit{n}}$/${\mathrm{Ge}}_{\mathit{n}}$ superlattices. Absorption onsets are observed that shift toward higher energies with de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b93ccc6d5587ea874b91cddfc9a3172
https://doi.org/10.1103/physrevb.46.12857
https://doi.org/10.1103/physrevb.46.12857
Autor:
Jesper Engvall, H. Kibbel, Hartmut Presting, Gerhard Abstreiter, Hermann G. Grimmeiss, J. Olajos, M. Gail
Publikováno v:
Applied Physics Letters. 66:2978-2980
Photoluminescence of pseudomorphic Ge wells grown by conventional molecular beam epitaxy on Si substrate is studied. The samples consist of p‐type doped Gem–Sin–Gem structures embedded in a Si1−xGex alloy. The luminescence lines shift to lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d28bee96c88e7b4ea146509e19a6a3
https://doi.org/10.1063/1.114249
https://doi.org/10.1063/1.114249
Autor:
J. Olajos, Jesper Engvall, Erich Kasper, Hermann G. Grimmeiss, Horst Kibbel, Hartmut Presting
Publikováno v:
Applied Physics Letters. 63:491-493
We report for the first time on room temperature electroluminescence in the region 1.3–1.7 μm from a strain‐adjusted Si6Ge4 superlattice. These results, together with photoluminescence, short‐circuit photocurrent spectroscopy, and voltage‐in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1e248788b3b92f2d9b86884c3f676a
https://doi.org/10.1063/1.110780
https://doi.org/10.1063/1.110780
Autor:
J. Olajos, Horst Kibbel, Hermann G. Grimmeiss, Jesper Engvall, Erich Kasper, Hartmut Presting
Publikováno v:
Thin Solid Films. 222:243-245
Optical interband transitions were studied in a series of short-period, strained-symmetrized superlattices grown by molecular beam epitaxy. The spectroscopical studies were performed using both mesa photodiodes and undoped superlattiee layers. Apart
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84821a18c4d41ec358a900bae5219931
https://doi.org/10.1016/0040-6090(92)90077-o
https://doi.org/10.1016/0040-6090(92)90077-o