Výsledky vyhledávání - "Jerzy KĄTCKI"

Akademický článek

Characterization of SOI fabrication process using gated-diode measurements and TEM studies

Autor: Jerzy Katcki, Jacek Ratajczak, Andrzej Jakubowski, Lidia Łukasiak, Daniel Tomaszewski, Jan Gibki

Publikováno v: Journal of Telecommunications and Information Technology, Iss 3-4 (2000)

SOI fabrication process was characterized using electrical and TEM methods. The investigated SOI structures included partially and fully depleted capacitors, gated diodes and transistors fabricated on SIMOX substrates. From C-V and I-V measurements o

Externí odkaz: https://doaj.org/article/5b00f4314ce5431ea279be394e1f443d

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Microscopy of Semiconducting Materials 2003

Autor: Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin

Publikováno v: A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩

International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261

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TEM study of the silicidation process in Pt/Si and Ir/Si structures

Autor: Laszcz, A., Ratajczak, J., Czerwinski, A., Jerzy KĄTCKI, Breil, N., Larrieu, G., Dubois, E.

Publikováno v: Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV
Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom
ResearcherID

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f0b0de964401e40785f7cf8892fa051b
https://hal.archives-ouvertes.fr/hal-00367363

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Effect of annealing at high hydrostatic pressure of silicon implanted with helium and oxygen

Autor: Misiuk, A., Jerzy KĄTCKI, Ratajczak, J., Raineri, V., Bak-Misiuk, J., Gawlik, L., Bryja, L., Jun, J.

Publikováno v: 65 (2002).
info:cnr-pdr/source/autori:Misiuk A., Katcki J., Ratajcza J., Raineri V., Bak-Misiuk J., Gawlik L., Bryja L., Jun J./titolo:Effect of annealing at high hydrostatic pressure of silicon implanted with helium and oxygen/doi:/rivista:/anno:2002/pagina_da:/pagina_a:/intervallo_pagine:/volume:65
ResearcherID

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c58f68999519abed58488fe7a05b4f66
https://publications.cnr.it/doc/65340

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