Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jerzy, Zuk"'
Autor:
Arno Janse van Vuuren, J.H. Neethling, Liudmila Vlasukova, Oleg Milchanin, Elke Wendler, V.A. Skuratov, Maxim Makhavikou, Alma Dauletbekova, F. F. Komarov, Iryna Parkhomenko, Jerzy Zuk
Publikováno v:
SSRN Electronic Journal.
Till now, shape elongation phenomenon was observed predominantly for metal nanoparticles irradiated with swift heavy ions (SHI). For the first time, we report the shape elongation of InAs and Zn(core)/ZnO(shell) nanoparticles (NPs) embedded in a sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defe44f596ee81b371f6e8cdb04f4fbb
https://doi.org/10.2139/ssrn.3859736
https://doi.org/10.2139/ssrn.3859736
Publikováno v:
Surface and Coatings Technology. 387:125494
The influence of noble gases ion implantation on the depth distribution of elements in the TiO2/SiO2 bilayers on the Si substrates has been investigated using the Rutherford Backscattering Spectrometry (RBS). The structures were implanted by Ne+, Ar+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b5b2ff32fb66a19f4e50b9513ff54f
https://doi.org/10.1016/j.surfcoat.2020.125494
https://doi.org/10.1016/j.surfcoat.2020.125494
Autor:
Jerzy Zuk, Lars Rebohle, Marcin Turek, Alois Lugstein, Michael Stöger-Pollach, Slawomir Prucnal, Manfred Helm, Markus Glaser, Denis Reichel, Wolfgang Skorupa, Emmerich Bertagnolli, Shengqiang Zhou
Publikováno v:
Nano Research. 7:1769-1776
Direct integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f0b1826456bd7da8a73229edf7bec0
https://doi.org/10.1007/s12274-014-0536-6
https://doi.org/10.1007/s12274-014-0536-6
Autor:
Mao Wang, Joerg Grenzer, Vitaly Zviagin, Jerzy Zuk, S. Zhou, Rüdiger Schmidt-Grund, Marius Grundmann, Manfred Helm, Wolfgang Skorupa, Robert Kudrawiec, Yonder Berencén, Lars Rebohle, Marcin Turek, A. Droździel, Krzysztof Pyszniak, Slawomir Prucnal, M. P. Polak
Publikováno v:
Journal of Applied Physics 125(2019), 203115
The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae09a4a5f5fc2d309aecccf153bd3c8
https://doi.org/10.1063/1.5082889
https://doi.org/10.1063/1.5082889
Autor:
Maciej Oskar Liedke, Matthias Voelskow, Slawomir Prucnal, Shengqiang Zhou, Wolfgang Skorupa, Marcin Turek, Jerzy Zuk, Arndt Mücklich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 312:104-109
The integration of III–V semiconductor material within silicon technology is crucial for performance of advanced electronic devices. This paper presents the investigations of microstructural and opto-electronic properties of GaAs quantum dots (QDs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be44cb95bc03a54088ebaf50d55a8307
https://doi.org/10.1016/j.nimb.2013.07.014
https://doi.org/10.1016/j.nimb.2013.07.014
Autor:
Aloke Kanjilal, Lars Rebohle, Slawomir Prucnal, Christine Baumgart, Stefan Facsko, A. Shalimov, Manfred Helm, Jerzy Zuk, Wolfgang Skorupa, Arndt Mücklich, Maciej Oskar Liedke, Helfried Reuther, Heidemarie Schmidt
Publikováno v:
Nano Letters. 11:2814-2818
InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a064efb1c3a406396c71e6fc070ab69
https://doi.org/10.1021/nl201178d
https://doi.org/10.1021/nl201178d
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1583-1587
Thin films (d ∼ 1 μm) of hydrogenated amorphous silicon carbide (a-Si1−xCx:H), deposited by RF reactive magnetron sputtering with different carbon content x, have been implanted with high fluences (Φ = 1016–1017 cm−2) of high-energy (E = 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7846e65528030c11af36cb28573c869d
https://doi.org/10.1016/j.nimb.2009.01.148
https://doi.org/10.1016/j.nimb.2009.01.148
Autor:
Sławomir Dobrzycki, Bogusław Poniatowski, Włodzimierz J. Musiał, E. Sitniewska, Jerzy Zuk, Przemysław Prokopczuk, Wacław Kochman, Paweł Kralisz, Konrad Nowak, Hanna Bachórzewska-Gajewska, Jerzy Sienkiewicz, Janusz Korecki
Publikováno v:
European Heart Journal. 28:2438-2448
Aims Our study aimed to compare two reperfusion strategies in patients with ST-elevation myocardial infarction (STEMI) admitted initially to a community hospital without catheterization facilities. Methods and results Four hundred and one patients wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f097d932c53d28d835f88b4d7a60427
https://doi.org/10.1093/eurheartj/ehm369
https://doi.org/10.1093/eurheartj/ehm369
Autor:
Wolfgang Skorupa, Marcin Turek, Lars Rebohle, Jerzy Zuk, Artur Wójtowicz, A. Drozdziel, Krzysztof Pyszniak, Slawomir Prucnal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1311-1313
When amorphous SiO2 films are bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (peroxy radicals POR, oxygen deficient centres (ODC), non-bridging oxygen hole centres (NBOHC), E′ centres,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35e3baf203636cf5aeab299d50f86726
https://doi.org/10.1016/j.nimb.2009.01.163
https://doi.org/10.1016/j.nimb.2009.01.163
Autor:
Arndt Mücklich, Manfred Helm, Shengqiang Zhou, Marcin Turek, Slawomir Prucnal, Xin Ou, W. Skorupa, Jerzy Zuk, Maciej Oskar Liedke, Helfried Reuther, Krzysztof Pyszniak
Publikováno v:
Nanotechnology 23(2012), 485204
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::decb8e4f8faee177e3e50b92f75a70fe
http://arxiv.org/abs/1211.2373
http://arxiv.org/abs/1211.2373
