Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jerry Z. Y. Guo"'
Autor:
F. Cerrina, Jerry Z. Y. Guo
Publikováno v:
IBM Journal of Research and Development. 37:331-350
Advanced semiconductor circuits, such as DRAMs, are based on very complex fabrication processes. Because of the cost and complexity involved, it is rapidly becoming impossible to adopt a "trial-and-error" approach in the development stage of a new pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecbeaceea9e6753b20735fd07eb02fc0
https://doi.org/10.1147/rd.373.0331
https://doi.org/10.1147/rd.373.0331
Autor:
Anthony E. Novembre, George K. Celler, David N. Tomes, Jerry Z. Y. Guo, J. Frackoviak, Joseph A. Abate, Allen G. Timko, Herschel Maclyn Marchman
Publikováno v:
SPIE Proceedings.
In this paper, the effect of resist contrast on the exposure latitude, printing bias, and dark erosion are discussed in the context of proximity x-ray lithography. Positive chemically amplified resists are studied. Both experimental and simulation re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c806d774a78881bb5c55fe92589aa5
https://doi.org/10.1117/12.209180
https://doi.org/10.1117/12.209180
Autor:
Jerry Z. Y. Guo, Franco Cerrina
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
The effect of absorber sidewall roughness on image formation in proximity X-ray lithography is studied based on simulation of the propagation of X-rays within the absorber and the diffraction of light over a proximity gap. We conclude that the absorb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1fe6aa027725acbb3b51882570a323e
https://doi.org/10.1117/12.146515
https://doi.org/10.1117/12.146515
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
The aberrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7849a48f65f7704a18e7827e6ef0ed68
https://doi.org/10.1117/12.146516
https://doi.org/10.1117/12.146516
Autor:
Jerry Z. Y. Guo, Franco Cerrina
Publikováno v:
SPIE Proceedings.
The characteristics of sources for x-ray lithography are analyzed in terms of image formation. In particular, laser-induced plasma and synchrotron radiation sources are compared. New design considerations are presented for both types of sources, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f246dd1c19c740d826e5199f15558600
https://doi.org/10.1117/12.47377
https://doi.org/10.1117/12.47377
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:4044
In proximity x‐ray lithography, wavelengths in the range of 4–20 A are used. The choice of wavelength is a complicated system issue, which depends on many lithographic aspects. Shorter wavelength x rays offer aerial image diffraction advantages.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a7c142914dc2dca83f53839596bd4ac
https://doi.org/10.1116/1.587427
https://doi.org/10.1116/1.587427
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3585
Increased performance of lithographic process techniques has been the key enabler for the continued reduction of minimum device feature sizes down to 0.25 μm and beyond. However, this increase in performance has been accompanied by the added fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565f7b3e90cc62bd662d3ce386fb0c4d
https://doi.org/10.1116/1.587476
https://doi.org/10.1116/1.587476
Autor:
E. Di Fabrizio, J. Frank, Jerry Z. Y. Guo, Franco Cerrina, Massimo Gentili, Q. Leonard, L. Luciani
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2902
Depth‐of‐focus (gap latitude in proximity lithography) and exposure latitude are the two most important figures‐of‐merit for linewidth control in lithography. In a recent article, the preliminary result of the experimental verification of thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ae91456e8ebe96be4a683b1ad5d2bc
https://doi.org/10.1116/1.586558
https://doi.org/10.1116/1.586558
Autor:
Massimo Gentili, L. Luciani, E. Di Fabrizio, Jerry Z. Y. Guo, Franco Cerrina, David Gerold, Q. Leonard
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:3150
The successful application of x‐ray lithography to a manufacturing process requires a detailed understanding of the image formation process. In a series of articles, a theoretical study of the optical processes involved in the definition of the ima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a069a542717c230ca511f6ad6d3b080
https://doi.org/10.1116/1.585901
https://doi.org/10.1116/1.585901
Autor:
Jerry Z. Y. Guo, Franco Cerrina
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3207
The image formed in proximity x‐ray lithography is normally computed using a physical optics model that takes in explicit account diffraction processes. It is important to understand the assumption implicit in the various models and the effects tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a9f6d5823b2d87bc0e570632484102
https://doi.org/10.1116/1.585288
https://doi.org/10.1116/1.585288