Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jerry Tzou"'
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun
Publikováno v:
Crystals, Vol 10, Iss 8, p 712 (2020)
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintain
Externí odkaz:
https://doaj.org/article/d9f4a37d446143068eec31e4149202a6
Autor:
De-Ren Yang, Neng-Jie You, Jia-Min Shieh, Wen-Chieh Ho, Hao-Chung Kuo, Sung-Wen Huang Chen, Jerry Tzou
Publikováno v:
IEEE Transactions on Nanotechnology. 20:489-494
In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm2. The GaN epi-layer was etched to the multi-fins-structure with optimized bevel angle. The fins structure enables to improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4f1d0104fedd9171b6051ce2d9c16c
https://doi.org/10.1109/tnano.2020.3047378
https://doi.org/10.1109/tnano.2020.3047378
Autor:
Wen-Kuan Yeh, Wen Ta Hsu, Jia Ming Shieh, Chih Wei Chen, Sze Ching Liu, Jerry Tzou, Wei Chen Ho, Yue Ming Hsin, Wen-Hsien Huang, Chang Hong Shen
Publikováno v:
Journal of Electronic Materials. 49:6776-6782
In this study, the device characteristics of dual-gate GaN high-electron-mobility transistors (HEMTs) were determined. The research investigated an enhancement-mode (E-mode) GaN HEMT with a second gate connected to the source and located between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a086581f7061b626dd2f1ada8e1a0051
https://doi.org/10.1007/s11664-020-08292-7
https://doi.org/10.1007/s11664-020-08292-7
Publikováno v:
Silicon. 13:1177-1183
AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in threshold voltage. The performance of proposed device is analyzed and compared with experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc872350ee131a3d44740cfd3e51b763
https://doi.org/10.1007/s12633-020-00503-4
https://doi.org/10.1007/s12633-020-00503-4
Autor:
Wen-Kuan Yeh, Mengqi Wang, Chang-Hong Shen, Jerry Tzou, Jia-Ming Shieh, Ng Wai Tung, Wen-Hsien Huang
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this work we propose a first attempt in the fabrication of a family of monolithic GaN-based quaternary multi-value logic gates (MVL), including QNOT, QNOR, and QNAND in a process flow compatible with enhancement mode (E-mode) power HEMT (BV > 650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8741137cc3968de85c62f78a7b90abb9
https://doi.org/10.1109/ispsd46842.2020.9170149
https://doi.org/10.1109/ispsd46842.2020.9170149
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Heterogeneous package-level integration plays an increasing role in higher functional density and lower power processors for general computing, machine learning and mobile applications. This paper will review technology trends and challenges for 2.5D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9e540732907e9ba5c6498125a53c57
https://doi.org/10.1109/vlsitechnology18217.2020.9265085
https://doi.org/10.1109/vlsitechnology18217.2020.9265085
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:075006
In this work, the effects of various recess depths and patterns in the ohmic contact of AlGaN/GaN HEMTs on device performance are investigated. In the studied device with a 22-nm Al0.23Ga0.77N barrier layer, as the recess depth and recess pattern are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b8592160dd697e2b244352591b6b7c
https://doi.org/10.1149/2162-8777/ac12b2
https://doi.org/10.1149/2162-8777/ac12b2
Conference
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