Zobrazeno 1 - 10
of 392
pro vyhledávání: '"Jerry M. Woodall"'
Autor:
Dewyani Patil-Chaudhari, Matthew Ombaba, Jin Yong Oh, Howard Mao, Kyle H. Montgomery, Andrew Lange, Subhash Mahajan, Jerry M. Woodall, M. Saif Islam
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 2, Pp 1-7 (2017)
A simple and inexpensive method for growing Ga2O3 using GaAs wafers is demonstrated. Si-doped GaAs wafers are heated to 1050 °C in a horizontal tube furnace in both argon and air ambients in order to convert their surfaces to β-Ga2O3. The β-Ga2O3
Externí odkaz:
https://doaj.org/article/a609be6eaa4a4ed9898b05ac442ad1c3
Publikováno v:
Journal of Electronic Materials. 49:3435-3440
Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6d9a60c9e8ee360415e8a4e10c4bf1
https://doi.org/10.1007/s11664-019-07848-6
https://doi.org/10.1007/s11664-019-07848-6
Publikováno v:
International Journal of Hydrogen Energy. 44:27695-27703
The Mg-bearing Al-Ga-In-Sn alloy with more stable hydrogen generation rate during hydrolysis reaction was synthesized, which is great suitable for the on-board hydrogen supply applications. The test results show that the hydrogen release rate of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deeca380b442aed92ddb1b7e05bacfad
https://doi.org/10.1016/j.ijhydene.2019.09.046
https://doi.org/10.1016/j.ijhydene.2019.09.046
Autor:
Hilal Cansizoglu, Badriyah Alhalaili, Ryan Bunk, Howard Mao, M. Saif Islam, Jerry M. Woodall, Ruxandra Vidu
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-14 (2020)
Scientific reports, vol 10, iss 1
Scientific Reports, Vol 10, Iss 1, Pp 1-14 (2020)
Scientific reports, vol 10, iss 1
In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3fd8712c99e8ed89168b21a4f29b49b
https://doi.org/10.1038/s41598-020-78326-x
https://doi.org/10.1038/s41598-020-78326-x
Autor:
Qi An, Zhijiang Jin, Nan Li, Hongchao Wang, Joel Schmierer, Cundi Wei, Hongyu Hu, Qian Gao, Jerry M. Woodall
Publikováno v:
Energy. 247:123489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::258e97a359b1e2bac2aa09dc51a06c17
https://doi.org/10.1016/j.energy.2022.123489
https://doi.org/10.1016/j.energy.2022.123489
Autor:
Ryan Bunk, Howard Mao, Hilal Cansizoglu, Badriyah Alhalaili, Daniel M. Dryden, Jerry M. Woodall, M. Saif Islam, Ruxandra Vidu
Publikováno v:
Materials, Vol 13, Iss 5377, p 5377 (2020)
Materials
Volume 13
Issue 23
Materials (Basel, Switzerland), vol 13, iss 23
Materials
Volume 13
Issue 23
Materials (Basel, Switzerland), vol 13, iss 23
A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (Ga2O3) nanowires using Ag thin film as a catalyst at 800 °
C and 1000 °
C to understand the effect of the silver catalyst on the nanowire gr
C and 1000 °
C to understand the effect of the silver catalyst on the nanowire gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3e0730762aee5de30d89a443bdd4dcb
https://www.mdpi.com/1996-1944/13/23/5377
https://www.mdpi.com/1996-1944/13/23/5377
Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3891cf3bde5ea201faafa17fe828d84
http://arxiv.org/abs/2003.14411
http://arxiv.org/abs/2003.14411
Autor:
Jin-Yong Oh, M. Saif Islam, Howard Mao, Subhash Mahajan, Dewyani Patil-Chaudhari, Jerry M. Woodall, Kyle H. Montgomery, Matthew Ombaba, Andrew Lange
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 2, Pp 1-7 (2017)
A simple and inexpensive method for growing Ga2O3 using GaAs wafers is demonstrated. Si-doped GaAs wafers are heated to 1050 °C in a horizontal tube furnace in both argon and air ambients in order to convert their surfaces to β-Ga2O3. The β-Ga2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::333db8b7a12b9217a234204b442397a7
https://doi.org/10.1109/jphot.2017.2688463
https://doi.org/10.1109/jphot.2017.2688463
Autor:
Vache Harotoonian, Jerry M. Woodall
Publikováno v:
Journal of Electronic Materials. 45:6305-6309
High-quality, single crystal wurtzite InN films were fabricated by radio-frequency magnetron reactive sputtering on GaN templates. The sputtered InN films in this study were about 100 nm thick. Atomic force microscopy analysis revealed the sputtered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01746751574bdf065438606b0cb5847f
https://doi.org/10.1007/s11664-016-5030-3
https://doi.org/10.1007/s11664-016-5030-3
Publikováno v:
Journal of Applied Physics. 127:245701
Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The nature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f78fe9c1f249345381434cf2f0517337
https://doi.org/10.1063/5.0008780
https://doi.org/10.1063/5.0008780