Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Jerry A. Stefani"'
Autor:
Duane S. Boning, Taber H. Smith, Stephanie W. Butler, Simon J. Fang, Jerry A. Stefani, Greg B. Shinn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1384-1390
We present a gauge study of an on-line metrology system for chemical-mechanical polishing and a 600 wafer run by run (RbR) control experiment enabled by on-line wafer measurement. The variability, reliability, and accuracy of the on-line metrology sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2f2496e537975c9def2eb36bd913515
https://doi.org/10.1116/1.581824
https://doi.org/10.1116/1.581824
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 11:276-284
Metal sputter deposition processes for semiconductor manufacturing are characterized by a decrease in deposition rate from run to run as the sputter target degrades. The goal is to maintain a desired deposition thickness from wafer to wafer and lot t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9861474db666dbe30a607264565f3612
https://doi.org/10.1109/66.670176
https://doi.org/10.1109/66.670176
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 9:366-383
An advanced multivariable in-line process control system, which combines traditional statistical process control (SPC) with feedback control, has been applied to the CVD tungsten process on an Applied Materials reactor. The goal of the model-based co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05de0161311feedef782e7a88bf4778f
https://doi.org/10.1109/66.536109
https://doi.org/10.1109/66.536109
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:2-9
On-line statistical process control (SPC) has been implemented on a single-wafer remote microwave plasma photoresist asher. SPC for ashing is made more difficult because the prior processes, e.g., ion implantation, affect the properties of the resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0bb45cccc7dad7daf8dae709548043
https://doi.org/10.1109/66.350752
https://doi.org/10.1109/66.350752
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1984-1991
An intelligent model‐based control system provides a framework for the efficient application of in situ sensors to semiconductor manufacturing. This article discusses the components of such a system. The specific example presented in this article i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabf820c45080cac026b62ab7bb963fa
https://doi.org/10.1116/1.578994
https://doi.org/10.1116/1.578994
Autor:
Jerry A. Stefani, Stephanie W. Butler
Publikováno v:
Journal of The Electrochemical Society. 141:1387-1391
To reduce surface damage and achieve vertical profiles during selective etching of polysilicon, uniformity of the pol silicon across the wafer after the bulk etch step must be ensured. The bulk polysilicon gate etch process on a single-wafer plasma r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf8417af7549228a40a1f87856600dc
https://doi.org/10.1149/1.2054930
https://doi.org/10.1149/1.2054930
The interaction of ion implantation with photoresist ashing: A statistical experimental design study
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:957-965
We applied statistical experimental design concepts to the study of the interaction of ion implantation with remote‐plasma photoresist ashing. A 28–4IV fractional‐factorial screening experiment revealed that implant species and resist hard bake
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1df1f65b99c2a831e5390357139c9c6b
https://doi.org/10.1116/1.577556
https://doi.org/10.1116/1.577556
Publikováno v:
Journal of Crystal Growth. 108:262-276
An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c314714ca33c0459115258a2256b6f
https://doi.org/10.1016/0022-0248(91)90373-d
https://doi.org/10.1016/0022-0248(91)90373-d
Publikováno v:
Journal of Crystal Growth. 106:611-621
Two-dimensional thermal profiles of growing Czochralski silicon crystals have been determined in situ using an eddy current probe. An analysis of multifrequency eddy current data was accomplished by modelling the interactions of the induced electroma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deaa21a1317142629998a6c4a637e186
https://doi.org/10.1016/0022-0248(90)90034-i
https://doi.org/10.1016/0022-0248(90)90034-i
Publikováno v:
1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391).
This work reconsiders within-wafer nonuniformity (WIWNU) metrics for semiconductor processes. Simulations of typical chemical-mechanical polishing (CMP) scenarios are used to demonstrate that these metrics may vary with the pre-process thickness prof
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f46a57f53866bcd130e96f4e2757f3b
https://doi.org/10.1109/iwstm.1999.773193
https://doi.org/10.1109/iwstm.1999.773193