Zobrazeno 1 - 10
of 254
pro vyhledávání: '"Jerome Mitard"'
Autor:
Seoyeon Choi, Dong Geun Park, Min Jung Kim, Seain Bang, Jungchun Kim, Seunghee Jin, Ki Seok Huh, Donghyun Kim, Jerome Mitard, Cheol E. Han, Jae Woo Lee
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 1, Pp n/a-n/a (2023)
A fast and precise threshold voltage (Vth) extraction method is required for the process design of electronic systems using metal–oxide–semiconductor field‐effect transistors (MOSFETs) and its immediate on‐site analysis during fabrication. Th
Externí odkaz:
https://doaj.org/article/5e610187ba4448a88db63f2a5986403f
Autor:
Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1514 (2023)
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (
Externí odkaz:
https://doaj.org/article/159b72733fdd4cceaa85f3f66d7c71b7
Autor:
Mandar S. Bhoir, Thomas Chiarella, Lars Ake Ragnarsson, Jerome Mitard, Valentina Terzeiva, Naoto Horiguchi, Nihar R. Mohapatra
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1217-1224 (2019)
This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the red
Externí odkaz:
https://doaj.org/article/7ec5231a8fcc4f308d70b5c2a1896db4
Autor:
Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee
Publikováno v:
Applied Sciences, Vol 10, Iss 8, p 2979 (2020)
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temper
Externí odkaz:
https://doaj.org/article/5fd122560bdd4bd78b7aad9fd6f639eb
Autor:
Xuyi Luo, En Xia Zhang, Peng Fei Wang, Kan Li, Dimitri Linten, Jerome Mitard, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 23:153-161
Publikováno v:
IEEE TRANSACTIONS ON ELECTRON DEVICES
The low-frequency (LF) noise characterization of Si0.7Ge0.3 pFinFETs and transistors’ performance were analyzed for different NH3 post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluct
Autor:
Lilach Choona, Jasmine Linshiz, Shaul Pres, Boris Levant, Noam Tal, Gaetano Santoro, Sylvain Baudot, Ann Opdebeeck, Jason Reifsnider, Senthil Vadakupudhu Palayam, Lorusso Gian, Jerome Mitard, Shay Yogev
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Seoyeon Choi, Dong Geun Park, Min Jung Kim, Seain Bang, Jungchun Kim, Seunghee Jin, Ki Seok Huh, Donghyun Kim, Sanghyeok Kim, Inkyu Yoon, Jerome Mitard, Cheol E. Han, Jae Woo Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
M. W. Rony, En Xia Zhang, Shintaro Toguchi, Xuyi Luo, Mahmud Reaz, Kan Li, Dimitri Linten, Jerome Mitard, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 69:299-306
Autor:
Subhali Subhechha, Nouredine Rassoul, Jerome Mitard, Romain Delhougne, Gouri Sankar Kar, Harold Dekkers, Geoffrey Pourtois, Christopher Pashartis, Luka Kljucar, Michiel van Setten
Publikováno v:
ACS Applied Electronic Materials. 3:4037-4046