Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jerome Goy"'
Autor:
Olivier Gourhant, Pascal Masson, Franck Julien, Jerome Goy, Giada Ghezzi, Jean-Luc Ogier, Thibault Kempf, Dann Morillon, Clement Pribat, Alexandre Villaret, N. Cherault, Stephan Niel, Philippe Lorenzini
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
In this paper, the reliability of thick SiO 2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanism
Autor:
Alexandre Villaret, Thibault Kempf, Dann Morillon, Jean-Luc Ogier, Giada Ghezzi, N. Cherault, Julien Delalleau, Franck Julien, Pascal Masson, Jerome Goy, Clement Pribat, Olivier Gourhant, Jean-Christophe Grenier, Stephan Niel
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
Targeting the integration of embedded non-volatile memories on thin-silicon body technology, high temperature oxide (HTO) is evaluated on a 40nm automotive eFlash process as replacement of furnace grown thick gate oxide for high voltage transistors.
Publikováno v:
Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering
A lot of studies have already ben realized on CMOS Image sensor but a few of them deals about the improvements which can be done to the commonly used pixel architecture. While this architecture of 3 or 4 transistors is very stable and has proved many
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3cc21f3f9c49ef532291de7576751cb
https://hal.archives-ouvertes.fr/hal-00007842
https://hal.archives-ouvertes.fr/hal-00007842
Publikováno v:
SPIE Proceedings.
CMOS image sensors are now becoming the technology of choice for most imaging applications, such as digital video cameras. The spatial field, in particular, is being interested in this new kind of sensor because of its low cost, its multiple function