Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jerome Depre"'
Autor:
Viorel Balan, Florent Michel, Ivanie Mendes, Celine Lapeyre, Lionel Vignoud, Ronald Otten, Orion Mouraille, Leon van Dijk, Blandine Minghetti, Jerome Depre, Richard J. F. van Haren
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d367259aebeb18e324291c32115778c3
https://doi.org/10.1117/12.2658296
https://doi.org/10.1117/12.2658296
Autor:
Joungchel Lee, Pui L. Lam, Blandine Minghetti, Céline Lapeyre, Michael J. May, Yoann Blancquaert, Jerome Depre
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Reducing the overlay error between stacked layers is key to enabling higher pattern density and thus moving towards high performance and more cost effective devices. However, as for specific applications like macrochips with photonic interconnects an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad83792a41cd190d9965898430511bcd
https://doi.org/10.1117/12.2552012
https://doi.org/10.1117/12.2552012
Autor:
Florent Dettoni, Christophe Dezauzier, Richard Johannes Franciscus Van Haren, Jerome Depre, R. Bouyssou, Sergey Tarabrin, Clément Massacrier, Victor Calado
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
With these proceedings we present μ-diffraction-based overlay (μDBO) targets that are well below the currently supported minimum size of 10×10 μm2 . We have been capable of measuring overlay targets as small as 4×4 μm2 with our latest generatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec1e7b258844abba2cf64b99d68abf4
https://doi.org/10.1117/12.2297673
https://doi.org/10.1117/12.2297673
Publikováno v:
SPIE Proceedings.
Continuous tightening of the overlay control budget in the semiconductor industry drives the need for improved overlay metrology capabilities. In this context, measurement accuracy needs to be addressed. The first part this study shows that Diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00836468e1d79445a79b230f930836f
https://doi.org/10.1117/12.2258206
https://doi.org/10.1117/12.2258206
Autor:
Henk-Jan H. Smilde, J. Ducote, Florent Dettoni, Yoann Blancquaert, Lars H. D. Driessen, Jerome Depre, Willy van Buel, Christophe Dezauzier, Jan Beltman, Richard Johannes Franciscus Van Haren
Publikováno v:
SPIE Proceedings.
Scatterometry mark design for improvement of the metrology performance is investigated in this joint work by ASML and STMicroelectronics. The studied marks are small, enabling metrology within the device area. The new mark-design approach reduces the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07964e37cae02b425339175b8742ba1a
https://doi.org/10.1117/12.2085642
https://doi.org/10.1117/12.2085642
Publikováno v:
SPIE Proceedings.
Continued tightening of overlay control budget in semiconductor lithography drives the need for improved metrology capabilities. Aggressive improvements are needed for overlay metrology speed, accuracy and precision. This paper is dealing with the on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbeaec7ffad302da1484ec1f1384ef44
https://doi.org/10.1117/12.2011406
https://doi.org/10.1117/12.2011406
Autor:
Alexander Serebriakov, Peter Benyon, Lua Pohling, Jerome Depre, Ng Teng Hwee, Young Ki Kim, Jeong Soo Kim, Jongkyun Hong
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
There are many IC-manufacturers over the world that use various exposure systems and work with very high requirements in order to establish and maintain stable lithographic processes of 65 nm, 45 nm and below. Once the process is established, manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107493a562494e197b9c9ee199d3db39
https://doi.org/10.1117/12.813609
https://doi.org/10.1117/12.813609
Autor:
Omar Brioso, Shinichi Tanaka, Tatsuhiko Higashiki, Mir Shahrjerdy, Kazutaka Ishigo, Jerome Depre, Ser-Yong Lim, Takuya Kono, Paul Christiaan Hinnen
Publikováno v:
SPIE Proceedings.
In this paper alignment and overlay results of the advanced technology nodes are presented. These results were obtained on specially generated wafers as well as on regular manufacturing-type wafers. For this purpose, a new alignment sensor was integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44d4c58b684312cd38d00eb13445ecf
https://doi.org/10.1117/12.712084
https://doi.org/10.1117/12.712084
Publikováno v:
Optical Microlithography XVIII.
The greatest challenge for 65-nm contact holes and via printing is ensuring an acceptable process window (250-nm DoF @ 8% EL) for a wide range of pitches with a MEEF lower than 3.5. To print dense contact holes / vias with a CD less than 100-nm, very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97d028615cfd468f352e45631d894c7
https://doi.org/10.1117/12.599760
https://doi.org/10.1117/12.599760
Alignment robustness for 90 nm and 65 nm node through copper alignment mark integration optimization
Autor:
Richard Johannes Franciscus Van Haren, Rob Morton, Henry Megens, Paul Christiaan Hinnen, Kevin E. Cooper, Clyde Browning, Jerome Depre, Ramon Navarro, Scott Warrick, Pierre-Olivier Sassoulas, Doug Reber
Publikováno v:
Optical Microlithography XVIII.
In this paper, methods for stacking ASML scribe lane alignment marks (SPM) and improving the mark performance at initial copper metal levels are discussed. The new mark designs and the theoretical reasons for mark design and/or integration change are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48aa27bfc71782b7a1c69a59d40dcd3a
https://doi.org/10.1117/12.599807
https://doi.org/10.1117/12.599807