Výsledky vyhledávání - "Jerome B. Lasky"

The evolution of IBM CMOS DRAM technology

Autor: Wendell P. Noble, B. F. Lloyd, Steven J. Holmes, Stephen Frank Geissler, Jerome B. Lasky, Eric Adler, Michael D. Armacost, James S. Nakos, Glen L. Miles, Steven H. Voldman, Mark D. Jaffe, Jeffrey B. Johnson, Richard A. Ferguson, John K. DeBrosse, C. W. Koburger

Publikováno v: IBM Journal of Research and Development. 39:167-188

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b34f9c3e058ca3d59b35c69cb5a449e
https://doi.org/10.1147/rd.391.0167

Zobrazit plný text záznamu

Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2

Autor: P.J. Geiss, James S. Nakos, O.J. Cain, Jerome B. Lasky

Publikováno v: IEEE Transactions on Electron Devices. 38:262-269

The phase transformation and stability of TiSi/sub 2/ on n/sup +/ diffusions are investigated. Narrower n/sup +/ diffusions require higher anneal temperatures, or longer anneal times, than wider diffusions for complete transitions from the high-resis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5ae07e90e1b8f7cd920b0cb69f2cbea5
https://doi.org/10.1109/16.69904

Zobrazit plný text záznamu

Oxidation-induced defect generation in advanced DRAM structures

Autor: S.R. Stiffler, C.W. Koburger, W.S. Berry, Jerome B. Lasky

Publikováno v: IEEE Transactions on Electron Devices. 37:1253-1287

Structures containing deep-trenched storage capacitors and shallow-trench isolation were examined in patterns suitable for future generation dynamic RAMs (DRAMs). These same effects were also examined in similar structures which included only the sha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1def759da1f57bae8208b61ec1cc71b
https://doi.org/10.1109/16.108186

Zobrazit plný text záznamu

A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices

Autor: Bruce W. Porth, J. Johnson, Jerome B. Lasky, Steven H. Voldman, Stephen Frank Geissler

Publikováno v: International Electron Devices Meeting 1991 [Technical Digest].

A new MOSFET gate-induced drain leakage (GIDL) mechanism is observed in narrow-width trench-isolated MOSFET devices. Electrical measurements and device simulation show that this mechanism occurs due to electric-field enhancement at the three-dimensio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::062b0c1db7f03da855ec96ce53f2954f
https://doi.org/10.1109/iedm.1991.235294

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání