Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeroen Huijbregtse"'
Autor:
Ton Kuiper, Fred Roozeboom, Erik van de Riet, Johan Donkers, Jilt Sietsma, Jeroen Huijbregtse
Publikováno v:
Journal of Applied Physics, 83, 1569-1574. American Institute of Physics Publising LLC
Huijbregtse, J M, Roozeboom, F, Sietsma, J, Donkers, J, Kuiper, T & van de Riet, E 1998, ' High-frequency permeability of soft-magnetic FeHfO films with high resistivity. ', Journal of Applied Physics, vol. 83, pp. 1569-1574 . https://doi.org/10.1063/1.366867
Huijbregtse, J M, Roozeboom, F, Sietsma, J, Donkers, J, Kuiper, T & van de Riet, E 1998, ' High-frequency permeability of soft-magnetic FeHfO films with high resistivity. ', Journal of Applied Physics, vol. 83, pp. 1569-1574 . https://doi.org/10.1063/1.366867
A series of Fe–Hf–O films has been prepared by means of rf sputter deposition. The composition for optimal permeability was found to be Fe55Hf17O28. These films exhibit a combination of soft-magnetic properties (μ>103, Hc 1 mΩ cm) after rapid t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::959cd6ee7597ca95e11cb5d936f57ea6
https://doi.org/10.1063/1.366867
https://doi.org/10.1063/1.366867
Autor:
Willem van Schaik, Jeroen Huijbregtse, Frances A. Houle, Hoa Truong, Nicolae Maxim, Vaughn R. Deline
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Determination of both the identity and quantity of species desorbing from photoresists during exposure at any wavelength - 248nm, 193nm and EUV - has proved to be very challenging, adding considerable uncertainty to the evaluation of risks posed by s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e420b0a52a69ca150ef405e1def237ec
https://doi.org/10.1117/12.813726
https://doi.org/10.1117/12.813726
Autor:
Jeroen Huijbregtse, Joseph S. Gordon, Christian Chovino, Brid Connolly, Marianna Silova, Colleen Weins, Larry E. Frisa, Nicolae Maxim
Publikováno v:
25th European Mask and Lithography Conference.
Advanced photolithography tools use 193 nanometer wavelength light for conventional and immersion printing. The increased energy of 193 nm (ArF) light coupled with the higher absorption cross section of most materials has lead to a dramatic increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb98bd05ad5a4a54dea71869285c1787
https://doi.org/10.1117/12.835174
https://doi.org/10.1117/12.835174
Autor:
Hoa D. Truong, Frances A. Houle, Jeroen Huijbregtse, Nicolae Maxim, W. van Schaik, Vaughn R. Deline
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:654
Because volatile species containing Si and S desorbed from photoresists during exposure to light can irreversibly damage optical elements inside a photolithography tool, accurate quantification of vapor fluxes is essential to evaluate risk. The autho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2229b4f8c6568eb4729bab0d1bc763
https://doi.org/10.1116/1.3100269
https://doi.org/10.1116/1.3100269