Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Jeroen Bolk"'
Autor:
Aleksandr Zozulia, Jeroen Bolk, Rene van Veldhoven, Gleb Nazarikov, Vadim Pogoretskiy, Samir Rihani, Graham Berry, Kevin Williams, Yuqing Jiao
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100258- (2024)
We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam
Externí odkaz:
https://doaj.org/article/9b2a6ff8609e4356bd0977cc4a77f4a0
Autor:
Tianran Liu, Sander Reniers, René van Veldhoven, A. A. Kashi, Kevin A. Williams, Zizheng Cao, Rakesh Ranjan Kumar, Hon Ki Tsang, Vadim Pogoretskii, MK Meint Smit, Tjibbe de Vries, Jeroen Bolk, Jorn P. van Engelen, Francesco Pagliano, Yi Wang, EJ Erik Jan Geluk, Jos J. G. M. van der Tol, Yuqing Jiao, Andrea Fiore, Weiming Yao, Xinran Zhao, Xuebing Zhang, Huub Ambrosius
Publikováno v:
Physica Status Solidi (A) Applications and Materials Science, 217(3):1900606. Wiley-VCH Verlag
physica status solidi (a)
physica status solidi (a)
Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::349a10e5451f5bbc8858a886307621dc
https://research.tue.nl/nl/publications/8dd93fa2-7aa6-44f9-84ea-905d9ed53a08
https://research.tue.nl/nl/publications/8dd93fa2-7aa6-44f9-84ea-905d9ed53a08
Autor:
Sylwester Latkowski, Kevin A. Williams, Huub Ambrosius, LM Luc Augustin, E. Bitincka, J. Darracq, Jeroen Bolk, Ripalta Stabile, D. Marsan, Xaveer Leijtens
Publikováno v:
IEEE Photonics Technology Letters, 30(13), 1222-1225. Institute of Electrical and Electronics Engineers
Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-fl
Autor:
Arjen Bakker, Dan Zhao, Erik den Haan, Sylwester Latkowski, LM Luc Augustin, Weiming Yao, Andre Richter, Rui Santos, Jeroen Bolk, Twan Korthorst, P. J. A. Thijs, Steven Kleijn, Sergei F. Mingaleev, Huub Ambrosius
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics, 24(1):7961202, 1-10. Institute of Electrical and Electronics Engineers
The standardization of photonic integration processes for InP has led to versatile and easily accessible generic integration platforms. The generic integration platforms enable the realization of a broad range of applications and lead to a dramatic c
Autor:
Yuqing Jiao, Sander Reniers, Kevin A. Williams, Jorn P. van Engelen, Jos J. G. M. van der Tol, Jeroen Bolk
Publikováno v:
2019 Compound Semiconductor Week, CSW 2019-Proceedings
For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of $1. 3\pm 0.1\mathbf{dB}/\mathbf{cm}$ is demonstrated in a Mac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::499462eaa2d3d362ccdbb66237bd0898
http://www.scopus.com/inward/record.url?scp=85071671069&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85071671069&partnerID=8YFLogxK
Autor:
Rutger Voets, LM Luc Augustin, Huub Ambrosius, Patty Stabile, Sylwester Latkowski, Jeroen Bolk, D. D'Agostino, Kevin A. Williams, E Elton Bitincka, Didier Marsan, P. DasMahapatra
Publikováno v:
43rd European Conference on Optical Communication, ECOC 2017, 1-3
STARTPAGE=1;ENDPAGE=3;TITLE=43rd European Conference on Optical Communication, ECOC 2017
ISSUE=43;STARTPAGE=1;ENDPAGE=3;TITLE=43rd European Conference on Optical Communications (ECOC 2017)
ECOC
STARTPAGE=1;ENDPAGE=3;TITLE=43rd European Conference on Optical Communication, ECOC 2017
ISSUE=43;STARTPAGE=1;ENDPAGE=3;TITLE=43rd European Conference on Optical Communications (ECOC 2017)
ECOC
ArF deep UV (193 nm) lithography was successfully applied to fabricate Arrayed Waveguide Gratings in generic Indium Phosphide technology. The sub-dB transmission losses demonstrate the advantages of scaling down the minimum feature size to 100 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f7e21e5d116a0ef6acb67b598c5eef2
https://research.tue.nl/nl/publications/e7e5bff8-170a-4c29-8cf5-a0239a42bf09
https://research.tue.nl/nl/publications/e7e5bff8-170a-4c29-8cf5-a0239a42bf09
Autor:
Jan Danckaert, Guy Verschaffelt, Xaveer Leijtens, Romain Modeste Nguimdo, Mulham Khoder, Jeroen Bolk
Publikováno v:
IEEE Photonics Technology Letters, 26(5), 520-523. Institute of Electrical and Electronics Engineers
We experimentally and numerically characterize the wavelength switching speed of a tunable semiconductor ring laser using filtered optical feedback. The feedback is realized employing two arrayed-waveguide gratings to split/recombine light into diffe
Publikováno v:
Journal of Lightwave Technology, 31(2), 322-327. IEEE/LEOS
All-optical regeneration has attracted growing interest due to the possibility to increase the all-optical reach. However, to be really competitive with optoelectronic regenerators, all-optical regenerators should process an entire wavelength divisio
Publikováno v:
Journal of Lightwave Technology, 30(17), 2913-2921. IEEE/LEOS
A monolithic InGaAsP/InP 4 × 4 cross-connect is designed, fabricated and demonstrated. Each of the four inputs fan out to two stages of semiconductor optical amplifier-based gates to perform broadband-input-selection and wavelength-specific-selectio
Autor:
B. Docter, IV Ermakov, Jeroen Bolk, M. Ashour, Jan Danckaert, Guy Verschaffelt, Xaveer Leijtens, Stefano Beri
Publikováno v:
IEEE Journal of Quantum Electronics, 48(2), 129-136. Institute of Electrical and Electronics Engineers
We introduce a novel concept of discretely tunable semiconductor lasers with on-chip filtered optical feedback. The integrated device is based on a semiconductor ring laser that can sustain two counter-propagating modes. By means of a directional cou