Evaluation of a new MgO barrier based on CoFeB/MgO/CoFeB structure for advanced MRAM applications

Autor: T. Sedoykina, A. Orlov, Jeremy Pereira, Jérémy Alvarez-Hérault, C. Portemont, Clarisse Ducruet, E. Danilkin, E. Smirnov

Publikováno v: Microelectronic Engineering. 167:6-9

MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB structures are very promi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05e0a10c1d71ebbfa5addcddce828548
https://doi.org/10.1016/j.mee.2016.09.010

Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Autor: L. Frangou, I. Joumard, Vincent Baltz, K. Akmaldinov, Jeremy Pereira, Clarisse Ducruet, C. Portemont, Jérémy Alvarez-Hérault, Bernard Dieny

Publikováno v: IEEE Magnetics Letters
IEEE Magnetics Letters, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩
IEEE Magnetics Letters, IEEE, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩

International audience; Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferrom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a23d294251493dfbc5972920483021d1
https://cea.hal.science/cea-01570114

CH and CN Radical Contribution in the Particle Formation Generated in a Radio-Frequency CH4/N2 Plasma

Autor: Jeremy Pereira, Véronique Massereau-Guilbaud, Isabelle Géraud-Grenier, André Plain

Publikováno v: Plasma Processes and Polymers. 2:633-640

The generation of particles in a CH 4 /N 2 radio-frequency discharge has been studied in order to understand the effect of nitrogen incorporation into the particles. The nitrogen increase in the gas mixture leads to a modification of the particle beh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c1e75c93e457899c74cc2a3852fcb71
https://doi.org/10.1002/ppap.200500014

Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM

Autor: Ken Mackay, Julien Vidal, I. L. Prejbeanu, Claire Creuzet, C. Portemont, Jérémy Alvarez-Hérault, Antoine Chavent, Bernard Dieny, Ricardo Sousa, Jeremy Pereira

Publikováno v: IEEE Transactions on Magnetics
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6f6b7dd986eaaf9b5d2e08c8cbf035a
https://hal.archives-ouvertes.fr/hal-02131755

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

Autor: Pierre Ranson, Remi Dussart, Laurianne Pichon, Mohamed Boufnichel, Jeremy Pereira, Corinne Duluard, Philippe Lefaucheux, El-Houcine Oubensaid

Publikováno v: Semiconductor Science & Technology
Semiconductor Science & Technology, 2009, 24, pp.075022. ⟨10.1088/0268-1242/24/7/075022⟩

International audience; The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min−1. This result is c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f9ae2062af5567b3f30efdec3bce915
https://hal.archives-ouvertes.fr/hal-00400936