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Autor:
Ricardo Sousa, Clarisse Ducruet, Marie Therese Delaye, C. Portemont, Christian Papusoi, Bernard Dieny, Jeremy Herault, Jean-Pierre Nozieres, Ken Mackay, Erwan Gapihan, I Lucien Prejbeanu
Publikováno v:
IEEE Transactions on Magnetics. 46:2486-2488
Thermally assisted MRAM cells with FeMn exchange biased storage layers were successfully written using 50 ns current pulses with write power densities below 10 mW/?m2 and current densities below 1.3 ×10 6 A/cm2. These low power density values were a