Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jeremy D. Russell"'
Autor:
Jeremy D Russell
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e43b624cd0dd4b8ec6e1b42ad0b5a8e
https://doi.org/10.1201/9781351074636-116
https://doi.org/10.1201/9781351074636-116
Publikováno v:
Microelectronics Reliability. 50:1446-1450
The optimal parameters of electron beam induced carbon deposition (EBICD) using hydrocarbon contamination were studied as a function of electron beam energy and scanning time to avoid the mixing or damage layer formation at the interface of the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc84a4163ed3d26686b79fb34811949a
https://doi.org/10.1016/j.microrel.2010.07.046
https://doi.org/10.1016/j.microrel.2010.07.046
Publikováno v:
Microscopy and Microanalysis. 21:2075-2076
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f328fa864d4cb02018fb101baa2d74
https://doi.org/10.1017/s1431927615011150
https://doi.org/10.1017/s1431927615011150
Publikováno v:
Microscopy and Microanalysis. 21:279-280
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccabcec1fae199fd29cc9bf56ef31859
https://doi.org/10.1017/s1431927615002196
https://doi.org/10.1017/s1431927615002196
Autor:
Esther Chen, Jeremy D. Russell, Daniel Flatoff, Nicolas LaManque, Bianzhu Fu, Wayne Zhao, Stephen Mongeon
Publikováno v:
Microscopy and Microanalysis. 20:362-363
Introductions of 3-Dimentional FinFET transistors in semiconductor device open a new era for continuous shrinkage of semiconductor transistor nodes. One big challenge for physical failure analysis (PFA) and transmission electron microscopy (TEM) is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345f009a915895eca10ad10233cb37c6
https://doi.org/10.1017/s1431927614003535
https://doi.org/10.1017/s1431927614003535
Publikováno v:
Microscopy and Microanalysis. 20:1000-1001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b791db274d1a5fa97a1f5d7ace972850
https://doi.org/10.1017/s1431927614006722
https://doi.org/10.1017/s1431927614006722
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper provides details of a novel method developed to cover a tiny epoxy layer as an intermediate buffer on the site-specific surface defect using a micro-bush on the tip of a glass needle in a plucking system without sample surface damage and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9008996a6dc1760c0807405744650e42
https://doi.org/10.31399/asm.cp.istfa2009p0126
https://doi.org/10.31399/asm.cp.istfa2009p0126
Publikováno v:
International Symposium for Testing and Failure Analysis.
One of the approaches to visualize dopant regions is to use SEM dopant contrast. In silicon, the technique is rather more problematical, presumedly because typical pn-junction built-in potentials are three times smaller. Dapor et al. have reviewed th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76af30ab741780e920ec90c96a37cc9
https://doi.org/10.31399/asm.cp.istfa2008p0510
https://doi.org/10.31399/asm.cp.istfa2008p0510
Publikováno v:
International Symposium for Testing and Failure Analysis.
Electron tomography includes four main steps: tomography data acquisition, image processing, 3D reconstruction, and visualization. After acquisition, tilt-series alignments are performed. Two methods are used to align the tilt-series: cross-correlati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1f2d25867123059f9d73752b807f4b
https://doi.org/10.31399/asm.cp.istfa2008p0172
https://doi.org/10.31399/asm.cp.istfa2008p0172
Publikováno v:
International Symposium for Testing and Failure Analysis.
It is well known that pursuing the miniaturization of devices to lower the cost and increase high-speed performance are extremely important goals for dynamic random access memory (DRAM). Therefore, electron tomography has a high potential for applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25beb418f6e18a9f0c1aaa28586cf42
https://doi.org/10.31399/asm.cp.istfa2007p0115
https://doi.org/10.31399/asm.cp.istfa2007p0115