Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeremy Belhassen"'
Autor:
Binyamin Kusnetz, Jeremy Belhassen, Denis E. Tranca, Stefan G. Stanciu, Stefan-Razvan Anton, Zeev Zalevsky, George A. Stanciu, Avi Karsenty
Publikováno v:
Results in Physics, Vol 56, Iss , Pp 107318- (2024)
A wide palette of nanoscale imaging techniques operating in the near-field regime has been reported to date, enabling an important number of scientific breakthroughs. While the tuning and benchmarking of near-field microscopes represent a very import
Externí odkaz:
https://doaj.org/article/3bef751fc8b343979428f5fdb069420a
Publikováno v:
Results in Physics, Vol 48, Iss , Pp 106445- (2023)
Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurations and usages, an original, cross-checking approach of combining analytical, experimental and numerical methods is presented to serve as a simple unif
Externí odkaz:
https://doaj.org/article/3ef2f843154749e69788d54038c917e0
Publikováno v:
Applied Surface Science. 585:152587
Publikováno v:
Journal of the Optical Society of America. A, Optics, image science, and vision. 37(1)
In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the develo
Publikováno v:
Applied Surface Science. 568:150876
A time dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature, electron concentration and electrical potential in semiconductor materials. If well-known experimental standard met
Publikováno v:
Nanomaterials
Volume 9
Issue 12
Volume 9
Issue 12
Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves,
Publikováno v:
Journal of the Optical Society of America A. 37:46
In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the develo
Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells
Publikováno v:
Results in Physics, Vol 32, Iss , Pp 105093- (2022)
GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW) have shown in the past multiple advantages in the domain of inter-sub-band transition (ISBT) while serving as the basic structures for advanced electro-optical devices. A new approach enables to create
Externí odkaz:
https://doaj.org/article/38e0965edb4542a6bcb214dc825c8659