Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeremie J. Dalton"'
Autor:
Peter Baumann, C. Lohe, Z. Karim, Woong Park, Johannes Lindner, Zhihong Zhang, Sasangan Ramanathan, P. Lehnen, Christian Manke, Tom Seidel, Olivier Biossiere, Jeremie J. Dalton
Publikováno v:
ECS Transactions. 3:363-374
We have investigated metal gate electrodes for use with high k HfSiOx gate dielectric films using AVD® and ALD technology. First, we report on the characterization of the AVD® and ALD deposition techniques where both HfO2 and SiO2 are combined for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320409b6331fff16f1e9aec5f4159231
https://doi.org/10.1149/1.2355727
https://doi.org/10.1149/1.2355727
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
Atomic layer deposition (ALD) has emerged as an enabling thin film deposition technology for making semiconductor devices with design rules below 100nm, especially when conformal coatings on high aspect ratio devices are needed. However, ALD is limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51aa6fc1b04e28f6148280f0327e8894
https://doi.org/10.1109/icsict.2006.306294
https://doi.org/10.1109/icsict.2006.306294
Publikováno v:
Electrochemical and Solid-State Letters. 10:H257
Atomic layer deposition (ALD) is demonstrated to be effective for filling gaps as small as ∼ 3 nm and aspect ratios greater than 10 with no void defects. Thus, it is a promising technique to enable the fabrication of complementary metal oxide semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5e246de4823f7eaf5d11972ea29c4b
https://doi.org/10.1149/1.2749331
https://doi.org/10.1149/1.2749331
Publikováno v:
ECS Meeting Abstracts. :1062-1062
In this work we discuss the design requirements for achieving higher productivity ALD solutions and we present a single-wafer reactor design that incorporates improvement elements. The effectiveness of this approach is evaluated by examining the impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b3a9306886545340efc1fcd05471409
https://doi.org/10.1149/ma2006-02/21/1062
https://doi.org/10.1149/ma2006-02/21/1062