Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Jeremiah R Lowney"'
Autor:
Jeremiah R. Lowney
Publikováno v:
Scanning. 17:281-286
A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam/specimen interaction, accurate edge location cannot be obtained. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d723da433a29a4b4624661b94aa1b03
https://doi.org/10.1002/sca.4950170503
https://doi.org/10.1002/sca.4950170503
Autor:
Jeremiah R. Lowney
Publikováno v:
Scanning. 18:301-306
Two computer codes for simulating the backscattered, transmitted, and secondary-electron signals from targets in a scanning electron microscope are described. The first code, MONSEL-II, has a model target consisting of three parallel lines on a three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1962ce885dc928a1bcaa9d6dcdf9a8b3
https://doi.org/10.1002/sca.1996.4950180406
https://doi.org/10.1002/sca.1996.4950180406
Publikováno v:
Scanning. 24:179-185
Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multipl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c86b8059db5aa2ead906a66a962ea05
https://doi.org/10.1002/sca.4950240404
https://doi.org/10.1002/sca.4950240404
Publikováno v:
Journal of Materials Research. 13:2480-2497
Aluminum gallium nitride (AlxGa1−xN) films, grown by metalorganic chemical vapor deposition on sapphire, were characterized by low-temperature cathodoluminescence (CL) and photoluminescence (PL), and room-temperature optical absorbance. The aluminu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57510302f664e2c8b38d776a7f276ffc
https://doi.org/10.1557/jmr.1998.0348
https://doi.org/10.1557/jmr.1998.0348
Publikováno v:
Materials Science and Engineering: B. 44:46-51
Scanning capacitance microscope (SCM) images of a semiconductor have contrast that is sensitive to variations in dopant density and spatial resolution on the order of the tip radius, approximately 10 nm. SCMs can be operated in a direct-capacitance,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5833f6885a3825312943f43ffb7d5c
https://doi.org/10.1016/s0921-5107(96)01797-7
https://doi.org/10.1016/s0921-5107(96)01797-7
Autor:
Jeremiah R. Lowney
Publikováno v:
Journal of Applied Physics. 78:1008-1012
A new method for determining the carrier densities and mobilities in a thin semiconducting layer was recently described. It is based on fitting the transverse magnetoresistance of the layers as a function of magnetic field, and it requires only two c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a25c8b9cb8621eba9eaa2faac652b2f
https://doi.org/10.1063/1.360770
https://doi.org/10.1063/1.360770
Publikováno v:
Physical Review B. 49:10976-10985
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bfedfd77899499df8cebdfc3ae5c06b
https://doi.org/10.1103/physrevb.49.10976
https://doi.org/10.1103/physrevb.49.10976
Publikováno v:
Journal of Electronic Materials. 22:985-991
Some processes used to passivate n-type mercury cadmium telluride photoconductive infrared detectors produce electron accumulation layers at the surfaces, which result in 2D electron gases. The dispersion relations for the electric subbands that occu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c7eac7467768d3be462b88ec83356e
https://doi.org/10.1007/bf02817514
https://doi.org/10.1007/bf02817514
Publikováno v:
Semiconductor Science and Technology. 8:753-776
An extensive industrial survey of the importance and use of characterization measurements for HgCdTe materials, processes and devices has been completed. Seventy-two characterization/measurement techniques were considered and thirty-five responses we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778f04dc8415939fe8a3b933846f6e6e
https://doi.org/10.1088/0268-1242/8/6s/001
https://doi.org/10.1088/0268-1242/8/6s/001
Publikováno v:
Journal of Electronic Materials. 22:207-214
Defects in ungated n- or p-type and gated p-type resistors have been characterized by photoinduced transient spectroscopy (PITS). These resistors were fabricated with p-type separation by implanted oxygen (SIMOX) wafers with a single-energy 200-keV o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c59795948e9b5995251645de1af085
https://doi.org/10.1007/bf02665028
https://doi.org/10.1007/bf02665028