Zobrazeno 1 - 10
of 22
pro vyhledávání: '"JeoungChill Shim"'
Autor:
Wing Yau, Dave Wang, Yuefei Yang, Robert Sadler, Daniel Hou, Ai Duong, William Sutton, Shiguang Wang, Chung-hsu Chen, JeoungChill Shim
Publikováno v:
Solid-State Electronics. 126:115-124
Modern communication systems require high linearity, usually in addition to high output power. High linearity requires a flat device transconductance (gm) vs. gate-source voltage (Vgs), while at the same time, transconductance must be high for high g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b6088ae7c43eeeb710620fef09fa4b
https://doi.org/10.1016/j.sse.2016.09.005
https://doi.org/10.1016/j.sse.2016.09.005
Autor:
Dave Wang, Shiguang Wang, JeoungChill Shim, Chung-hsu Chen, William Sutton, Robert Sadler, Yuefei Yang, Daniel Hou, Wing Yau
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A typical GaN HEMT forward gate current can be described by a simplified model, i.e., a Schottky diode with a parasitic resistance. This model, though, fails to fit certain GaN HEMT devices, noticeably those with AlN spacer. The Tsu-Esaki tunneling m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de158ef8a8a473449b9c973632c2ffe0
https://doi.org/10.1109/csics.2016.7751071
https://doi.org/10.1109/csics.2016.7751071
Autor:
Kazutaka Takagi, Jeoungchill Shim, Hiroyuki Sakurai, Ken Onodera, Keiichi Matsushita, Hisao Kawasaki, Mayumi Hirose, Kunio Tsuda, N. Shinichiro, Kazutoshi Masuda, Yoshiharu Takada, Tomohide Soejima
Publikováno v:
2011 IEEE MTT-S International Microwave Symposium.
Summary form only given, as follows. AlGaN/GaN High Electron Mobility Transistors (HEMTs) with pre-match circuit were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98a052893ef8bdd6a9ab885e182dc2dc
https://doi.org/10.1109/mwsym.2011.5973511
https://doi.org/10.1109/mwsym.2011.5973511
Autor:
Mayumi Hirose, Jeoungchill Shim, Yoshiharu Takada, Kazutoshi Masuda, Kunio Tsuda, Hisao Kawasaki, Kazutaka Takagi, Hiroyuki Sakurai, Tomohide Soejima, Keiichi Matsushita, Shinichiro Nakanishi, Ken Onodera
Publikováno v:
2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications.
An efficiency of AlGaN/GaN High Electron Mobility Transistors(HEMTs) were improved for Ku band. The AlGaN/GaN HEMTs were developed with an achievable fmax of 138GHz, which depended on the thickness of the AlGaN barrier layer and the gate length. A 6.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38910aacdccfec46cc340011ee90c413
https://doi.org/10.1109/imws.2011.5877129
https://doi.org/10.1109/imws.2011.5877129
Autor:
Jun Liang, Tetsu Tanaka, Mitsumasa Koyanagi, Hiroyuki Kurino, JeoungChill Shim, Yoshihiro Nakagawa, Takafumi Fukushima, Jun Deguchi
Publikováno v:
Future Medical Engineering Based on Bionanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e541a4b54ac316e8464984e8c66c56
https://doi.org/10.1142/9781860948800_0049
https://doi.org/10.1142/9781860948800_0049
Publikováno v:
FPT
A parallel images processing field programmable gate array (FPGA) for real time image processing system has been proposed to realize high image processing speed and flexibility. This FPGA has a small size configuration memory. In addition, a parallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3782d09a7824dc2100b1af5022d6a412
https://doi.org/10.1109/fpt.2003.1275779
https://doi.org/10.1109/fpt.2003.1275779
Publikováno v:
AINA (2)
We propose a novel real-shared memory module with multiports which is called "RSMM" to overcome the bus bottleneck problem in a parallel processor system with shared memory. The testing processor can be directly connected to this RSMM via its multipo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60517e23a90558c1e8a9230ef2140b00
https://doi.org/10.1109/aina.2004.1283795
https://doi.org/10.1109/aina.2004.1283795
Autor:
Hoon Choi, M. Takata, S. Kondoh, Takeshi Sakaguchi, JeoungChill Shim, Mitsumasa Koyanagi, Hiroyuki Kurino
Publikováno v:
IEEE International Electron Devices Meeting 2003.
A new non-volatile memory with extremely high density metal nano-dots, MND (metal nano-dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. The MND film is used as a charge retention layer in the MND memory. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7fcc3e4f21f5139fd0a4a51e44775e
https://doi.org/10.1109/iedm.2003.1269343
https://doi.org/10.1109/iedm.2003.1269343
Publikováno v:
Parallel and Distributed Computing: Applications and Technologies ISBN: 9783540240136
PDCAT
PDCAT
Nowadays, it is very important that integrating parallel processors on a chip offers high performance and low interactive response time on applications with fine-grained parallelism and high degree of data sharing. We propose a novel real-shared cach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::753f3ebc6bc33069638646e51451a199
https://doi.org/10.1007/978-3-540-30501-9_108
https://doi.org/10.1007/978-3-540-30501-9_108
Autor:
Mitsumasa Koyanagi, Hiroyuki Kurino, Takafumi Fukushima, JeoungChill Shim, Taiichiro Watanabe, Hajime Mushiake, Jun Deguchi, Kazuhiro Sakamoto, Keita Motonami
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3629f1dc1741c1b5ed04141df2769719
https://doi.org/10.7567/ssdm.2004.i-6-1
https://doi.org/10.7567/ssdm.2004.i-6-1