Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeoung-Mo Koo"'
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The critical building blocks that have enabled high-performance and high-reliability BCD technologies optimized for power management applications over the past 30 years are identified. These building blocks, which include process modules, equipment,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd0f88e9bdf5d0b4757f47245115e5f
https://doi.org/10.23919/ispsd50666.2021.9452276
https://doi.org/10.23919/ispsd50666.2021.9452276
Autor:
Jeoung Mo Koo, Soh Yun Siah, Mandana Tadayoni, Liz Cuevas, Joseph Norman, Lemke Steven, Henry Nguyen, Sheng-Hsiung Hsueh, Ee Ee Yeoh, Kok Foong Chong, Shiang Yang Ong, Namchil Mun, Hung Chang Liao, Yuri Tkachev, Zin Tun Thant, Xiaobo Ma, Jianbo Zhou, Ke Dong, Bai Yen Nguyen, Zhongxiu Yang, Huihua Jiang
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In this work we successfully integrated the split-gate SuperFlash® ESF1 cell into our 130nm BCD (Bipolar-CMOS-DMOS) platform for automotive applications. The platform enhances the modularity of flash macro in addition to logic devices, high performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb52fbda73767a8978296413bf23626b
https://doi.org/10.1109/edtm.2019.8731154
https://doi.org/10.1109/edtm.2019.8731154
Autor:
Ashvini Gyanathan, Amitha Susan Eapen, Ming Li, Appu Mathew Varkey, Yunpeng Xu, Jeoung Mo Koo
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
This paper explores a low-cost method to improve the Breakdown Voltage (BV) of a Switching Device without compromising on the Source-Drain Resistance (RDSON). This can be achieved by introducing a metal field plate over the Gate and the extended Drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc6763a17cf72d25cfd406652921982f
https://doi.org/10.1109/edtm.2019.8731104
https://doi.org/10.1109/edtm.2019.8731104
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
We have developed a cost-optimized 0.18μm BCD technology platform, which provides fully isolated LDMOS devices with competitive specific on-resistance (Rsp) over a range of operating voltages (6V to 30V). In addition, latch-up-free ESD solutions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48e50e2ec44070e5754d49758f7b747
https://doi.org/10.1109/edssc.2015.7285244
https://doi.org/10.1109/edssc.2015.7285244