Zobrazeno 1 - 10
of 17
pro vyhledávání: '"JeongKi Park"'
Autor:
Cheolhyeong Lee, Cheol Lee, Junsung Lim, Jeongki Park, Jaehak Jung, Hayoung Lee, Myeongjong Lee
Publikováno v:
Medicina, Vol 60, Iss 2, p 273 (2024)
Background and Objectives: The analgesia/nociception index (ANI) potentially monitors nociceptive status during anesthesia, but its link to preoperative pain sensitivity is unclear. We investigated the relationship between pre-anesthetic ANI scores a
Externí odkaz:
https://doaj.org/article/3af4849d1cad4bdeb02bceecf17af2c9
Publikováno v:
Medicina, Vol 59, Iss 3, p 578 (2023)
Background and objectives: Anesthesia maintenance agents affect the incidence of postoperative shivering (PS) after general anesthesia. This study compared the effects of remimazolam with sevoflurane on PS in patients undergoing laparoscopic gynecolo
Externí odkaz:
https://doaj.org/article/e8fa790142884262bed6e8ad4333738d
Autor:
DaYeon Lee, HanByeol Park, Ha Young Jung, Junho Jung, Seung-Hwa Baek, Jong-Wook Jung, Sun-Mi Park, Ki-Sun Kwon, Heui-Seok Jin, Dong-Jin Lee, GwangTae Kim, JeongKi Park, Seung Hee Lee, MinSu Kim
Global energy policies urge us to reduce the power consumption of electronic devices, but it is inconsistent with the user’s needs of enhancing device performances, which discourages the global energy consumption requirement. In this work, the conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf8448966698669dc2bae2d18839c2e
https://doi.org/10.21203/rs.3.rs-2977463/v1
https://doi.org/10.21203/rs.3.rs-2977463/v1
Publikováno v:
IEEE Robotics & Automation Magazine. :2-18
Autor:
Young Jin Lim, Hyun Soo Jeon, Yeon Jin Han, Junho Jung, Wontaeck Kim, Yong Hak Park, GwangTae Kim, JeongKi Park, MinSu Kim, Seung Hee Lee
Publikováno v:
Optical Materials Express. 13:1563
Local dimming technology enables high dynamic range liquid crystal displays (LCDs). However, when displaying a bright image in a dark background, so-called halo mura (halation caused by local light leakage in oblique viewing directions) appears and d
Publikováno v:
SID Symposium Digest of Technical Papers. 50:160-163
Publikováno v:
Solid-State Electronics. 152:53-57
We investigated how the zero-voltage duration (0Vd) affects the tendency of degradation during pulsed gate bias stress in a-InGaZnO thin film transistors (TFTs). DC or pulsed negative bias illumination stress (NBIS) or positive bias stress (PBS) was
Autor:
Dong-Jin Lee, JongJin Choi, GwangTae Kim, JeongKi Park, Kyungil Kim, JongSuk Shin, Park Yonghak
Publikováno v:
SID Symposium Digest of Technical Papers. 50:924-926
Autor:
Yirang Lim, GwangTae Kim, HyeJeong Park, Dong-Jin Lee, Dae-Heung Lee, JeongKi Park, Jaehyun Lee, Kyungil Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 50:921-923
Publikováno v:
Solid-State Electronics. 137:22-28
We investigated the degradation mechanism of a-InGaZnO TFTs under simultaneous gate and drain bias stress. Gate and drain bias of 20 V were applied simultaneously to induce current stress, and abnormal turn-around behavior in transfer characteristics