Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeong-Yeol Jang"'
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Autor:
Dae Kyu Choi, Sung Kyeong Kim, Chin-Wook Chung, Jong Woo Lee, Jae Min Myoung, Jeong Yeol Jang, Geun Young Yeom, Tae Ho Yoon, Hyoun Woo Kim, Hyungsun Kim, Hyoung June Kim, Ju Hyun Myung, Keeho Kim
Publikováno v:
Journal of Materials Science. 41:5040-5042
Publikováno v:
SPIE Proceedings.
The trim process with organic BARC to fabricate sub-90 nm gate was developed with ArF lithography. This trim process is not required extra hard mask layer which we usually use to overcome weak etching resistance of ArF photoresist. BARC etching step
Autor:
Hyoun Woo Kim, Ju Hyun Myung, Jong Woo Lee, Hyung-Sun Kim, Keeho Kim, Jeong-Yeol Jang, Tae-Ho Yoon, Sung Kim, Dae-Kyu Choi, Chin-Wook Chung, Geun Yeom, Jae-Min Myoung, Hyoung-June Kim
Publikováno v:
Journal of Materials Science; Aug2006, Vol. 41 Issue 15, p5040-5042, 3p, 2 Diagrams, 1 Graph